MT48LC8M16A2P-6A:G

The MT48LC8M16A2P-6A:G is a 128 Mbit SDRAM device organized as 8M × 16 with four internal banks and a parallel memory interface. It implements fully synchronous, pipelined SDR SDRAM architecture and is targeted at systems requiring high-speed, discrete DRAM in a 54-pin TSOP II package.

Typical use cases include commercial-board memory subsystems where PC100/PC133 compliance, 3.3 V power operation, and a 0°C to +70°C operating range are required. The device delivers predictable timing and configurable burst lengths to support system memory designs that rely on synchronous DRAM operation.

Key Features

• Memory Core 128 Mbit SDRAM organized as 8M × 16 with four internal banks (2M × 16 × 4 banks).
• Synchronous SDRAM Architecture Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation for column-address changes every clock cycle.
• Performance & Timing -6A speed grade supports a 167 MHz clock frequency with target timing 3-3-3 (RCD/RP/CL = 18 ns). Access time specified as 5.4 ns; programmable CAS latency and burst lengths (1, 2, 4, 8, or full page).
• Refresh & Power Modes Auto refresh and auto precharge modes with standard and low-power self-refresh options noted in the datasheet; 4096-cycle refresh counts (64 ms for commercial).
• Voltage & I/O Single-supply operation around 3.3 V (specified 3.0 V to 3.6 V / 3.3 V ±0.3 V) with LVTTL-compatible inputs and outputs.
• Package & Temperature 54-pin TSOP II (400 mil, 10.16 mm width) plastic package; commercial operating temperature range 0°C to +70°C.
• Standards Compliance Documented as PC100- and PC133-compliant in the device feature set (per datasheet content).

Typical Applications

• PC memory subsystems Use as discrete SDRAM on boards requiring PC100/PC133-compliant SDRAM performance and timing.
• Embedded commercial systems Board-level DRAM for embedded designs that operate from a 3.3 V supply and within a 0°C to +70°C ambient range.
• Board-level replacements and upgrades Form-factor compatible solution for designs that require a 54-pin TSOP II memory device with standard SDRAM feature set (burst modes, auto refresh).

Unique Advantages

• Synchronous, pipelined operation: Enables column-address changes every clock cycle for predictable, clocked memory transactions.
• Flexible burst and latency options: Programmable burst lengths and CAS latency settings support tuning for different access patterns and system timing.
• Robust refresh options: Auto refresh and self-refresh modes with 4K refresh cycles simplify maintenance of data integrity over time.
• Standard 3.3 V supply compatibility: Operates across a 3.0 V to 3.6 V range (3.3 V ±0.3 V), matching common legacy and commercial system power rails.
• Compact TSOP II package: 54-pin TSOP II (400 mil) package provides a board-level footprint suitable for dense PCB layouts.

Why Choose MT48LC8M16A2P-6A:G?

The MT48LC8M16A2P-6A:G positions as a straightforward, standards-based 128 Mbit SDRAM option for commercial system designers who need synchronous, pipelined DRAM with configurable bursts and established timing grades. Its support for PC100/PC133 features, combined with 3.3 V operation and a 54-pin TSOP II package, makes it suitable for legacy and current commercial-board memory implementations.

Backed by Micron Technology product documentation, this device is appropriate for engineers seeking predictable timing, refresh control, and a compact package for board-level memory integration in commercial-temperature applications.

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