MT48LC8M16A2P-6A XIT:L TR
| Part Description |
IC DRAM 128MBIT PAR 54TSOP II |
|---|---|
| Quantity | 157 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 128 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 12 ns | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of MT48LC8M16A2P-6A XIT:L TR – IC DRAM 128MBIT PAR 54TSOP II
The MT48LC8M16A2P-6A XIT:L TR is a 128 Mbit synchronous DRAM organized as 8M × 16 with a parallel memory interface in a 54-pin TSOP II (0.400", 10.16 mm width) package. It implements fully synchronous SDRAM architecture with internal pipelined operation and four internal banks to optimize row access and precharge sequencing.
Designed for systems requiring standard 3V–3.6V operation and an industrial operating temperature range of −40°C to +85°C, this device targets applications requiring PC100/PC133-compatible SDRAM behavior, programmable burst access, and support for standard and low-power self-refresh modes.
Key Features
- Core / Architecture Fully synchronous SDRAM with all signals registered on the positive edge of the system clock and internal pipelined operation; supports four internal banks to hide row access/precharge.
- Memory Organization 128 Mbit total capacity organized as 8M × 16 (2M × 16 × 4 banks).
- Timing / Performance Speed grade -6A supports up to 167 MHz clock frequency with an access time of 5.4 ns (CL = 3).
- Programmed Burst & Modes Programmable burst lengths of 1, 2, 4, 8 or full page; supports Auto Precharge (including concurrent auto precharge), Auto Refresh, and Self Refresh (standard and low power).
- Refresh 64 ms refresh interval with 4,096 refresh cycles.
- Interface & I/O Parallel memory interface with LVTTL-compatible inputs and outputs; column address can be changed every clock cycle.
- Power Single supply operation at 3.0 V to 3.6 V (documented as +3.3 V ±0.3 V in datasheet notes).
- Package & Temperature 54-pin TSOP II (400 mil) package and an industrial ambient temperature rating of −40°C to +85°C (TA).
Typical Applications
- Embedded systems Use as parallel SDRAM memory for embedded controllers and processors that require synchronous, pipelined DRAM in a TSOP II package.
- Industrial control Suitable for designs operating across an industrial temperature range (−40°C to +85°C) where standard 3.3 V SDRAM is required.
- Legacy PC/board-level memory expansion Appropriate for PC100/PC133-compatible designs and other legacy systems requiring parallel SDRAM with programmable burst modes.
Unique Advantages
- Industrial temperature rating: −40°C to +85°C operation supports deployment in temperature-sensitive and industrial environments.
- High-speed access: -6A speed grade supports up to 167 MHz clocking with 5.4 ns access time (CL = 3), enabling fast synchronous reads and writes.
- Flexible burst operation: Programmable burst lengths (1, 2, 4, 8, full page) simplify memory sequencing for different throughput and latency requirements.
- Standard 3.3 V supply: Single-supply operation at 3.0–3.6 V aligns with common system power rails for straightforward integration.
- Compact TSOP II package: 54-pin TSOP II (0.400", 10.16 mm) package provides a board-level footprint suitable for space-constrained designs.
- Power management modes: Auto Refresh and Self Refresh (standard and low power) help manage refresh behavior and power consumption in standby conditions.
Why Choose IC DRAM 128MBIT PAR 54TSOP II?
The MT48LC8M16A2P-6A XIT:L TR delivers synchronous, pipelined SDRAM functionality in a compact 54-pin TSOP II package with industrial temperature capability and standard 3.3 V supply operation. Its combination of up to 167 MHz clocking, 5.4 ns access time (CL = 3), programmable burst modes, and built-in refresh/self-refresh behavior makes it suitable for systems that require predictable, parallel SDRAM performance.
This device is ideal for designers needing a 128 Mbit parallel SDRAM organized as 8M × 16 with robust timing options and standard interface characteristics, providing straightforward integration into board-level memory subsystems where industrial temperature range and TSOP II packaging are required.
Please request a quote or submit a sales inquiry to obtain pricing, availability, and lead-time information for the MT48LC8M16A2P-6A XIT:L TR.