MT48LC8M16A2P-6A:G TR

The MT48LC8M16A2P-6A:G TR is a 128 Mbit volatile SDRAM organized as 8M × 16 with a parallel memory interface in a 54‑pin TSOP II package. It implements fully synchronous SDR SDRAM architecture with internal pipelined operation and internal banks to optimize row access and precharge operations.

Designed for systems that require compact, board‑level synchronous DRAM, the device offers PC100/PC133 compliance options, programmable burst lengths, and standard refresh and self‑refresh modes for maintained data integrity during operation.

Key Features

• Memory Core: 128 Mbit SDRAM organized as 8M × 16 with 4 internal banks for efficient row access and precharge management.
• Synchronous SDRAM Architecture: Fully synchronous operation with all signals registered on the positive edge of the system clock and internal pipelined operation allowing column address changes every clock cycle.
• Performance: Speed grade -6A supports a clock frequency of 167 MHz; device timing includes CAS latency options and an access time of 5.4 ns as specified.
• Programmable Burst & Timing: Programmable burst lengths (1, 2, 4, 8 or full page) and options for common CAS latency settings (examples shown in datasheet timing table).
• Refresh & Power Management: Auto refresh with 4K refresh cycles, auto precharge and auto refresh modes, and self‑refresh modes (standard and low power per datasheet options).
• Interface Levels & Voltage: LVTTL‑compatible inputs/outputs; single 3.3 V ±0.3 V supply (3.0–3.6 V operating range).
• Timing Characteristics: Write cycle time (word/page) specified at 12 ns; timing options shown for PC100/PC133 grading in the datasheet.
• Package & Temperature: 54‑pin TSOP II (0.400", 10.16 mm width) surface‑mount package; commercial operating temperature range 0°C to +70°C.

Typical Applications

• PC/Legacy System Memory: Suitable for designs requiring PC100/PC133‑compliant synchronous DRAM solutions.
• Board‑Level System Memory: Used as parallel SDRAM on embedded or board‑level platforms that require a 128 Mbit x16 memory in a 54‑TSOP II footprint.
• Buffer and Working Memory: Applicable where synchronous burst access and internal banking are needed for temporary data storage and buffering.

Unique Advantages

• Compact TSOP II Package: 54‑pin TSOP II (0.400", 10.16 mm) enables higher board density and standard surface‑mount assembly.
• Synchronous, Pipelined Operation: Registered inputs on the system clock and pipelined architecture allow predictable timing and column‑level throughput control.
• Flexible Burst and Refresh Modes: Programmable burst lengths, auto precharge, auto refresh and self‑refresh modes provide design flexibility for varying power and performance needs.
• Established Timing Grades: -6A speed grade supports 167 MHz operation with documented CAS latency and timing parameters for integration and validation.
• Standard 3.3 V Supply Range: Operates from 3.0 V to 3.6 V (single 3.3 V ±0.3 V supply), matching common board power rails.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The MT48LC8M16A2P-6A:G TR provides a concise, industry‑standard 128 Mbit SDRAM solution in a 54‑pin TSOP II footprint, combining synchronous, pipelined operation with programmable burst behavior and standard refresh capabilities. Its documented timing grades and PC100/PC133 compliance options make it suitable for integration into designs that require predictable SDRAM timing and established interface levels.

This device suits designers and procurement teams seeking a board‑level parallel SDRAM memory with defined operating voltages and commercial temperature range, backed by Micron's product specifications and datasheet timing information for system validation.

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