MTFC32GJDED-3M WT TR
| Part Description |
IC FLASH 256GBIT MMC 169VFBGA |
|---|---|
| Quantity | 1,096 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 169-VFBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 1.65V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 169-VFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | MMC | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MTFC32GJDED-3M WT TR – IC FLASH 256GBIT MMC 169VFBGA
The MTFC32GJDED-3M WT TR is a 256 Gbit non-volatile NAND flash memory device in Micron's e•MMC series. It implements FLASH‑NAND technology with an MMC memory interface and a 32G × 8 organization for high-density embedded storage.
Packaged in a 169‑VFBGA (14×18) form factor and specified for operation from 1.65 V to 3.6 V and −25 °C to 85 °C (TA), this device targets designs that require compact, board‑mountable MMC flash memory with a defined temperature and voltage operating window.
Key Features
- Memory Type & Technology Non‑volatile FLASH using NAND technology for persistent data storage.
- Capacity & Organization 256 Gbit total capacity organized as 32G × 8 to provide high-density on‑board storage.
- Interface MMC memory interface suitable for e•MMC series implementations.
- Voltage Supply Wide operating supply range from 1.65 V to 3.6 V to accommodate varied power domains.
- Package 169‑VFBGA (14×18) supplier device package designed for compact board‑level mounting.
- Operating Temperature Specified ambient operating range of −25 °C to 85 °C (TA).
- Manufacturer & Series Part of the Micron Technology Inc. e•MMC series, listed under the MTFC32GJDED-3M WT TR part number.
Typical Applications
- MMC-based embedded storage — Used where an MMC interface is required for onboard flash storage implementations.
- High-density non-volatile storage — For designs that require 256 Gbit of NAND flash in a single device.
- Compact board-level integration — Suitable for systems needing a compact BGA package (169‑VFBGA, 14×18) for space-constrained PCB layouts.
Unique Advantages
- High storage density: 256 Gbit capacity provides substantial onboard non‑volatile storage in a single device.
- Standard MMC interface: e•MMC/MMC interface simplifies integration into designs that support MMC memory.
- Flexible power range: 1.65 V to 3.6 V supply range allows operation across multiple power domains.
- Compact BGA package: 169‑VFBGA (14×18) package enables space-efficient board mounting.
- Defined operating range: Specified for −25 °C to 85 °C (TA) to meet common ambient temperature requirements.
- Micron e•MMC series: Offered as part of Micron Technology Inc.'s e•MMC family under the MTFC32GJDED-3M WT TR designation.
Why Choose IC FLASH 256GBIT MMC 169VFBGA?
The MTFC32GJDED-3M WT TR combines 256 Gbit NAND flash capacity, an MMC interface, and a compact 169‑VFBGA (14×18) package to deliver a straightforward solution for embedded designs that require high-density non‑volatile storage. Its defined operating voltage and temperature ranges make it suitable for applications with those specific electrical and environmental requirements.
This device is a practical option for engineers and procurement teams specifying e•MMC-series memory from Micron Technology Inc. when a balance of capacity, interface compatibility, and compact package footprint is needed.
Request a quote or submit a pricing inquiry to receive availability and lead‑time information for the MTFC32GJDED-3M WT TR.
