MTFC32GJVED-3M WT TR

IC FLASH 256GBIT MMC 169VFBGA
Part Description

IC FLASH 256GBIT MMC 169VFBGA

Quantity 21 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package169-VFBGAMemory FormatFLASHTechnologyFLASH - NAND
Memory Size256 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-25°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging169-VFBGA
Mounting MethodNon-VolatileMemory InterfaceMMCMemory Organization32G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MTFC32GJVED-3M WT TR – IC FLASH 256GBIT MMC 169VFBGA

The MTFC32GJVED-3M WT TR is a Micron e•MMC™ non-volatile NAND flash memory device providing 256 Gbit of storage in a 169-VFBGA package. It implements a 32G × 8 memory organization with an MMC interface and operates from a 2.7 V to 3.6 V supply.

With an operating temperature range of −25°C to 85°C, this device is intended for systems that require MMC-format flash storage in a compact BGA package.

Key Features

  • Memory Type: Non-volatile NAND flash—provides persistent storage using FLASH - NAND technology.
  • Capacity & Organization: 256 Gbit capacity organized as 32G × 8, enabling high-density storage in a single device.
  • Interface: MMC memory interface—designed for systems that use the MMC protocol for embedded storage.
  • Supply Voltage: 2.7 V to 3.6 V operation—compatible with standard 3 V system power rails.
  • Package: 169-VFBGA—compact ball-grid array footprint for space-constrained board designs.
  • Temperature Range: −25°C to 85°C (TA)—specified operating range for typical commercial environments.

Typical Applications

  • MMC-based storage systems — Use where an MMC interface is required for non-volatile flash storage implementation.
  • Embedded storage modules — Integrate as onboard NAND flash memory in designs that need 256 Gbit capacity in a compact package.
  • Systems with 3 V supply rails — Suitable for devices operating within a 2.7 V to 3.6 V supply range and requiring persistent data storage.

Unique Advantages

  • High-density storage: 256 Gbit capacity in a single device reduces the need for multiple parts to achieve large storage sizes.
  • Standard MMC interface: Simplifies integration into systems designed for MMC-format memory without requiring custom interfaces.
  • Compact BGA package: 169-VFBGA package allows high-density board layouts and saves PCB real estate.
  • Wide supply voltage tolerance: 2.7 V to 3.6 V operation supports common system power rails and reduces power-rail constraints.
  • Commercial temperature range: −25°C to 85°C specification supports deployment in typical commercial applications.

Why Choose IC FLASH 256GBIT MMC 169VFBGA?

The MTFC32GJVED-3M WT TR combines Micron's NAND FLASH technology with an MMC interface and a compact 169-VFBGA package to provide a straightforward, high-density non-volatile storage option. Its voltage and temperature specifications make it suitable for designs that require reliable MMC-format flash within standard commercial operating conditions.

This device is a fit for engineers and procurement teams looking for a single-device 256 Gbit storage solution from Micron Technology Inc., offering straightforward integration into MMC-based designs and long-term availability tied to an established memory manufacturer.

Request a quote or submit an inquiry for MTFC32GJVED-3M WT TR to check availability, lead times, and pricing for your project.

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