TH58NVG5S0FTA20

The TH58NVG5S0FTA20 from Kioxia America, Inc. is a 32 Gbit (4G × 8) NAND flash memory device organized for high-density non-volatile storage. It implements CMOS NAND E²PROM architecture with on-chip registers and supports automated program and erase operations.

Engineered for embedded storage uses, the device targets solid-state file storage, voice recording and image-file memory in still cameras and other systems that require large-capacity, non-volatile data retention within a 48‑TSOP I package.

Key Features

• Memory Capacity & Organization — 32 Gbit total capacity organized as 4G × 8; memory array and two 4,328‑byte static registers enable data transfer in 4,328‑byte increments.
• Flash Technology — FLASH - NAND (SLC) technology providing non-volatile storage suitable for repeated program/erase cycles.
• Interface & Mode Control — Parallel x8 organization with serial input/output and command-control modes that use I/O pins for address, data and command inputs.
• Performance — Serial read cycle down to 25 ns (CL=100 pF); cell-array-to-register transfer up to 30 µs maximum; auto page program typically 300 µs/page and auto block erase typically 3 ms/block.
• Power — Single supply operation from 2.7 V to 3.6 V; typical operating currents specified (Read/Program/Erase max 30 mA, Standby max 200 µA).
• Erasure & Program Granularity — Erase implemented per block (256 Kbytes + 14.5 Kbytes: 4,328 bytes × 64 pages); page size 4,328 bytes.
• Reliability & Maintenance — Minimum number of valid blocks specified (min 16,064 blocks); design requires 4‑bit ECC per each 512‑byte sector.
• Package & Temperature — 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) package; operating temperature range 0°C to 70°C.

Typical Applications

• Solid-State File Storage — High-density NAND storage for embedded file systems requiring large non-volatile capacity and block-level erase/program control.
• Voice Recording Systems — Stores recorded audio data with page/program and block/erase management suited for streaming or chunked writes.
• Still Image Memory — Image-file storage for digital cameras and imaging devices that need large-capacity non-volatile memory in a compact TSOP package.

Unique Advantages

• High Capacity in Compact Package: 32 Gbit NAND in a 48‑TSOP I package reduces board area while providing large non-volatile storage.
• On-Chip Register Architecture: Two 4,328‑byte static registers enable block-wise data transfers between register and cell array for streamlined program/read operations.
• Automated Program/Erase Operations: Auto page program and auto block erase simplify host control and reduce firmware overhead for common memory operations.
• Defined Performance Metrics: Specified read cycle (25 ns), cell-to-register transfer (30 µs max), and typical program/erase times allow predictable system timing and performance planning.
• System-Level ECC Requirement: Explicit 4‑bit ECC per 512‑byte sector requirement supports data integrity planning at the system level.
• Low-Voltage Single-Supply Operation: 2.7 V to 3.6 V supply range matches common 3.3 V embedded platforms for straightforward power integration.

Why Choose TH58NVG5S0FTA20?

The TH58NVG5S0FTA20 provides a clear specification set for high-density NAND storage: 32 Gbit capacity, defined timing for read/program/erase operations, and on-chip registers for efficient data movement. Its 48‑TSOP I footprint and single‑supply 2.7 V–3.6 V operation make it suitable for compact embedded systems requiring robust non-volatile storage within a 0°C to 70°C operating window.

This device is a fit for designers and integrators building products that need block-level erase/program control, predictable performance numbers, and an explicitly stated ECC requirement to support system data integrity planning.

Request a quote or submit an inquiry to sales for availability, pricing and lead‑time information for the TH58NVG5S0FTA20.