TH58NVG5S0FTAK0

The TH58NVG5S0FTAK0 is a 32 Gbit non-volatile memory device implementing SLC NAND flash with a parallel memory interface. Packaged in a 48-TSOP I (48-TFSOP) form factor and specified for operation from -40°C to 85°C, it targets designs that require parallel FLASH storage with explicit SLC NAND architecture.

Its electrical operating range of 2.7 V to 3.6 V and documented 25 ns write cycle time for word/page operations provide clear, verifiable parameters for integration into systems that use parallel FLASH memory.

Key Features

• Memory Core – SLC NAND: Single-Level Cell (SLC) NAND flash technology for the device class provided; designed as non-volatile FLASH memory.
• Capacity & Organization: 32 Gbit total capacity organized as 4G × 8, supporting byte-wide parallel operation.
• Interface: Parallel memory interface suitable for systems that require parallel FLASH connectivity.
• Performance: Write cycle time (word/page) specified at 25 ns, providing a documented timing metric for write operations.
• Voltage Range: Supply voltage specified at 2.7 V to 3.6 V, enabling operation across a common 3.0 V nominal domain.
• Package: 48-TFSOP / 48-TSOP I package with an 18.40 mm width (0.724"), supporting surface-mount PCB integration.
• Temperature Range: Operating ambient range of -40°C to 85°C (TA), suitable for extended-temperature system environments.
• Memory Format & Mounting: FLASH memory format listed with a non-volatile mounting type for persistent data storage.

Typical Applications

• Embedded storage systems — Use as parallel NAND FLASH for firmware, code storage, or non-volatile data in embedded equipment.
• Industrial control equipment — The -40°C to 85°C operating range supports deployment in industrial-temperature applications.
• Legacy parallel-interface designs — Parallel memory interface and 48-TSOP package accommodate systems designed around parallel FLASH connectivity.

Unique Advantages

• SLC NAND architecture: The specified SLC NAND technology provides the device classification used for applications that require single-level cell FLASH.
• High density configuration: 32 Gbit capacity (4G × 8 organization) offers substantial non-volatile storage in a single package.
• Documented write timing: A 25 ns write cycle time for word/page operations supplies a concrete performance metric for system timing analysis.
• Wide supply tolerance: 2.7 V to 3.6 V supply range enables compatibility with common 3.0 V power domains.
• Extended operating temperature: Rated from -40°C to 85°C for use in temperature-sensitive or industrial environments.
• Compact TSOP package: 48-TSOP I (48-TFSOP) package supports surface-mount integration while retaining a parallel interface footprint.

Why Choose TH58NVG5S0FTAK0?

The TH58NVG5S0FTAK0 is positioned for designs that require documented SLC NAND flash capacity in a parallel interface form factor. Its combination of 32 Gbit organization, 25 ns write cycle timing, and a 48-TSOP I package provides clear electrical, timing, and mechanical parameters for engineering integration.

With a 2.7 V to 3.6 V supply range and an operating temperature span of -40°C to 85°C, this device suits systems requiring stable non-volatile storage across extended temperature environments and common supply voltages.

Request a quote or submit a product inquiry to receive pricing and availability details for the TH58NVG5S0FTAK0.