Q6422XM3BDGVK-U
| Part Description |
IC DRAM 64GBIT PAR 200FBGA |
|---|---|
| Quantity | 1,122 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Kingston Technology |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 24 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 200-FBGA (10x14.5) | Memory Format | DRAM | Technology | SDRAM - Mobile LPDDR4X | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | 3.5 ns | Grade | Industrial | ||
| Clock Frequency | 2.133 GHz | Voltage | 1.06V ~ 1.17V, 1.7V ~ 1.95V | Memory Type | Volatile | ||
| Operating Temperature | -25°C ~ 85°C (TC) | Write Cycle Time Word Page | 18 ns | Packaging | 200-VFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4G x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0036 |
Overview of Q6422XM3BDGVK-U – IC DRAM 64GBIT PAR 200FBGA
The Q6422XM3BDGVK-U is a 64 Gbit Low Power DRAM (LPDDR4X) device in a 200-ball FBGA package from Kingston Technology. It implements a parallel LPDDR4X architecture with two channels (2048M × 16 I/O × 2 channels) to deliver high-bandwidth, double-data-rate memory for mobile and compact system designs.
Designed for low-voltage operation and high data throughput, the device targets mobile and handheld applications requiring fast, energy-efficient DRAM. Key value comes from its 4266 Mb/s maximum data rate, programmable timing and driver options, and advanced refresh/power-saving features.
Key Features
- Memory Architecture and Capacity — 64 Gbit total capacity organized as 2048M × 16 I/O × 2 channels (2 ranks), providing 4G × 16 logical organization and eight internal banks per channel.
- High Data Rate — Clock rate 2133 MHz (2.133 GHz) with a maximum data rate of 4266 Mb/s per pin and double-data-rate transfers.
- Low-Power Supply Options — Multiple supply domains: VDD1 = 1.70–1.95 V, VDD2 = 1.06–1.17 V and VDDQ = 0.57–0.65 V, enabling low-power operation typical of LPDDR4X devices.
- Programmable Timing and Drivers — Programmable read and write latencies (RL/WL) and selectable driver strength for system tuning.
- Burst and Transfer Modes — Supports burst lengths of 16, 32 and on-the-fly burst mode (enabled by MRS) with auto-precharge options.
- Refresh and Power Management — Auto-refresh, self-refresh, per-bank refresh, Partial Array Self-Refresh (PASR), and Auto Temperature Compensated Self-Refresh (ATCSR) using a built-in temperature sensor; 8192 refresh cycles per 32 ms.
- Signal Interfaces — Differential clock inputs (CK_t/CK_c) and bi-directional differential data strobe (DQS_t/DQS_c); commands and data referenced to both clock/DQS edges. DMI pin support for write data masking and DBI/DC functionality.
- Package and Thermal — 200-ball FBGA (200-VFBGA / 200-FBGA 10 × 14.5 mm) with operating temperature range TC = −25 °C to +85 °C.
- Performance Timing — Access time ~3.5 ns and write cycle time (word page) 18 ns.
Typical Applications
- Mobile and Handheld Devices — High-bandwidth LPDDR4X memory for mobile computing and handheld systems requiring energy-efficient DRAM.
- Embedded Systems — Parallel LPDDR4X interface and programmable latencies suitable for embedded designs that need configurable memory performance.
- Consumer Electronics — Memory capacity and throughput for consumer devices that leverage low-voltage, high-speed DRAM.
Unique Advantages
- High Throughput: 4266 Mb/s maximum data rate and 2133 MHz clock enable high-bandwidth data transfers for performance-sensitive workloads.
- Low-Voltage Operation: Multiple supply domains including VDD2 ≈1.06–1.17 V and VDDQ ≈0.57–0.65 V reduce power draw in portable applications.
- Flexible Timing and Drive Control: Programmable RL/WL and driver strength let designers tune latency and signal integrity for specific system needs.
- Advanced Power Management: PASR, per-bank refresh, ATCSR and self-refresh options minimize refresh overhead and extend low-power operation windows.
- Compact FBGA Package: 200-ball FBGA (10 × 14.5 mm supplier package) balances density and mounting for compact system boards.
- Robust Thermal Range: Specified operation from −25 °C to +85 °C for a wide set of ambient conditions.
Why Choose IC DRAM 64GBIT PAR 200FBGA?
The Q6422XM3BDGVK-U LPDDR4X device from Kingston Technology offers a combination of high data rate, low-voltage operation and advanced refresh and power-management features tailored for mobile and embedded designs. Its dual-channel organization and programmable timing options provide designers with flexibility to balance latency, throughput and power for target applications.
This device is appropriate for projects that require 64 Gbit capacity in a 200-ball FBGA footprint, support for DDR transfers at up to 4266 Mb/s, and temperature operation between −25 °C and +85 °C. Backward-compatible data-rate support and configurable operating parameters help integrate the part into existing LPDDR4x-based system architectures.
Request a quote or contact sales to discuss availability, pricing and integration details for the Q6422XM3BDGVK-U LPDDR4X DRAM.