NAND512W3A2SZAXE
| Part Description |
IC FLASH 512MBIT PAR 63VFBGA |
|---|---|
| Quantity | 863 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 63-VFBGA (9x11) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 63-TFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND512W3A2SZAXE – 512 Mbit NAND Flash, Parallel, 63-VFBGA
The NAND512W3A2SZAXE is a 512 Mbit non-volatile NAND flash memory device organized as 64M x 8. It implements parallel NAND flash architecture in a compact 63-VFBGA (9x11) package for board-level mounting.
Designed for systems that require on-board non-volatile storage, this device offers a 50 ns access time, a 2.7 V to 3.6 V supply range, and an operating temperature range of -40°C to 85°C, delivering deterministic electrical and thermal operating parameters for system designers.
Key Features
- Memory Type & Organization Non-volatile NAND flash memory organized as 64M × 8, providing 512 Mbit of storage capacity.
- Interface Parallel NAND memory interface for direct integration with parallel memory controllers and legacy parallel buses.
- Performance 50 ns access time with a write cycle time (word/page) of 50 ns, enabling predictable read/write timings.
- Power Operates from a 2.7 V to 3.6 V supply range to match standard 3.3 V system rails.
- Package & Mounting 63-VFBGA (9×11) package in a 63-ball TFBGA form factor suitable for surface-mount assembly.
- Operating Conditions Rated for an ambient operating temperature range of -40°C to 85°C (TA).
Unique Advantages
- Substantial non-volatile capacity: 512 Mbit storage provides ample space for firmware, data logging, or asset storage within constrained system footprints.
- Deterministic timing: 50 ns access and write cycle times allow predictable memory timing for system-level integration and control.
- Standard voltage range: 2.7 V to 3.6 V compatibility simplifies power-supply design in 3.3 V-based systems.
- Compact BGA package: 63-VFBGA (9×11) offers a small board area for high-density implementations while supporting surface-mount assembly.
- Wide operating temperature: -40°C to 85°C rating supports deployments across common industrial and commercial temperature environments.
Why Choose IC FLASH 512MBIT PAR 63VFBGA?
The NAND512W3A2SZAXE provides a balanced combination of capacity, electrical performance, and packaging for designs that require parallel NAND flash memory. Its 512 Mbit organization, 50 ns access characteristics, and 2.7 V–3.6 V supply compatibility make it suitable for systems where defined timing and standard voltage operation are important.
This device is a practical choice for engineers seeking a surface-mount NAND flash solution in a 63-VFBGA form factor, with an extended -40°C to 85°C operating range for varied environmental conditions. Its clear, published electrical and mechanical parameters support reliable integration and long-term deployment in applicable designs.
Request a quote or submit an inquiry to receive pricing and availability information for the NAND512W3A2SZAXE and to discuss volume or lead-time requirements.
