NAND512W3A2SNXE

The NAND512W3A2SNXE is a 512 Mbit non-volatile NAND flash memory device organized as 64M × 8. It provides parallel NAND flash storage in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) package with a supply voltage range of 2.7 V to 3.6 V.

Designed for systems that require parallel NAND flash memory, the device offers 50 ns access time and a 50 ns write cycle time (word/page), and operates across a temperature range of -40 °C to 85 °C.

Key Features

• Memory Type  Non-volatile NAND flash offering 512 Mbit capacity organized as 64M × 8 for byte-oriented parallel access.
• Performance  50 ns access time and 50 ns write cycle time (word/page) for read and write responsiveness in parallel memory applications.
• Power  Wide supply voltage range of 2.7 V to 3.6 V to suit systems operating from nominal 3.0 V power rails.
• Interface  Parallel memory interface for direct connection to parallel controllers or legacy parallel buses.
• Package  48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) surface-mount package for compact board-level integration.
• Operating Temperature  Rated for -40 °C to 85 °C ambient operation to support a wide range of environmental conditions.

Typical Applications

• Embedded Systems  Provides non-volatile parallel storage for firmware, code, or data in embedded controller designs requiring 512 Mbit capacity.
• Industrial Equipment  Suitable for industrial devices that need NAND flash memory with an operating range from -40 °C to 85 °C.
• Storage Modules  Can be used as a parallel NAND component in custom flash storage modules and memory subsystems.

Unique Advantages

• 512 Mbit Density:  Delivers substantial non-volatile storage capacity in a single parallel component, enabling higher data or code density on board.
• Parallel Interface:  Parallel memory organization (64M × 8) simplifies integration with parallel controllers and legacy bus architectures.
• Deterministic Performance:  50 ns access and write cycle times provide predictable read/write timing for system design and timing analysis.
• Wide Voltage Compatibility:  2.7 V to 3.6 V supply range supports designs using common 3.0 V rails and tolerant power domains.
• Compact Surface-Mount Package:  48-TSOP I package supports a compact board footprint while maintaining accessible pinout for parallel connections.
• Extended Temperature Range:  Specified for -40 °C to 85 °C operation to accommodate a broad set of deployment environments.

Why Choose NAND512W3A2SNXE?

The NAND512W3A2SNXE positions itself as a straightforward parallel NAND flash solution combining 512 Mbit capacity, 50 ns timing characteristics, and a compact 48-TSOP I package. Its voltage range (2.7 V–3.6 V) and -40 °C to 85 °C operating rating make it suitable for designs that require stable parallel non-volatile storage across typical industrial temperature and power conditions.

This device is appropriate for engineers and procurement teams specifying parallel NAND flash for embedded systems, industrial equipment, or custom storage modules where predictable timing, compact packaging, and mid-range density are required. Manufactured by Micron Technology Inc., the component aligns with standard NAND flash integration requirements outlined in the device specifications.

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