NAND512W3A2SZA6F TR
| Part Description |
IC FLASH 512MBIT PAR 63VFBGA |
|---|---|
| Quantity | 194 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 63-VFBGA (9x11) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 63-TFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND512W3A2SZA6F TR – IC FLASH 512MBIT PAR 63VFBGA
The NAND512W3A2SZA6F TR is a 512 Mbit parallel NAND flash memory device organized as 64M × 8. It implements NAND flash technology to provide non-volatile storage in a compact BGA package.
With a 50 ns access time, 2.7 V–3.6 V supply range and an operating temperature range of −40°C to 85°C, this device is intended for systems that require parallel NAND flash storage with defined performance and standard industrial temperature tolerance.
Key Features
- Memory Type & Technology Non-volatile NAND flash memory offering 512 Mbit capacity organized as 64M × 8.
- Interface Parallel memory interface for direct byte-wide system integration.
- Performance 50 ns access time with a 50 ns write cycle time for word/page operations.
- Voltage Operates from 2.7 V to 3.6 V, supporting standard 3.0 V system rails.
- Package Available in a 63-ball TFBGA package (supplier package listed as 63-VFBGA, 9×11) for board-level density and soldered mounting.
- Temperature Range Rated for −40°C to 85°C ambient operation.
Typical Applications
- Embedded storage systems — Provides non-volatile program and data storage using a parallel NAND interface where 512 Mbit capacity meets system requirements.
- Firmware and code storage — Suitable for storing firmware images and boot code that require defined access timing and byte-wide parallel access.
- Industrial control devices — Operates across −40°C to 85°C, making it applicable in temperature-constrained industrial control applications needing reliable non-volatile memory.
Unique Advantages
- Defined performance metrics: 50 ns access and write cycle times provide predictable timing for system designers.
- Standard parallel interface: Byte-wide parallel connectivity simplifies integration with legacy or parallel-memory architectures.
- Wide supply range: 2.7 V–3.6 V operation fits common 3.0 V system power rails.
- Compact BGA footprint: 63-ball TFBGA / 63-VFBGA (9×11) package delivers board-level density for space-constrained designs.
- Industrial temperature tolerance: Specified −40°C to 85°C operation for deployment in temperature-challenging environments.
Why Choose IC FLASH 512MBIT PAR 63VFBGA?
The NAND512W3A2SZA6F TR from Micron Technology Inc. combines 512 Mbit NAND flash capacity with a parallel interface and defined 50 ns timing characteristics, offering predictable performance for systems that require byte-wide non-volatile storage. Its 2.7 V–3.6 V supply range and −40°C to 85°C operating window make it suitable for a range of industrial and embedded applications.
This device is appropriate for designers seeking a Micron-branded NAND flash component in a compact BGA package where capacity, access timing, and temperature tolerance are key selection criteria.
Request a quote or contact sales to check pricing and availability for the NAND512W3A2SZA6F TR.
