NAND512W4A0AN6E

The NAND512W4A0AN6E is a 512 Mbit non-volatile NAND flash memory device organized as 32M × 16 with a parallel memory interface. It provides mid-density parallel flash storage in a 48-TSOP package suited for designs requiring raw parallel flash capacity and predictable access characteristics.

Key attributes include a 50 ns access time, a 2.7 V to 3.6 V supply range, and an extended operating temperature range of −40°C to 85°C, making it applicable where consistent read/write timing, standard power rails and extended temperature tolerance are required.

Key Features

• Memory Core 512 Mbit NAND flash organized as 32M × 16, providing parallel-accessable non-volatile storage.
• Performance 50 ns access time and 50 ns write cycle time (word/page) support deterministic read/write timing for systems that use parallel memory access.
• Power Operates across a 2.7 V to 3.6 V supply range to match common 3 V embedded system rails.
• Interface & Packaging Parallel memory interface in a 48-TFSOP / 48-TSOP package (0.724", 18.40 mm width) for board-level integration with standard TSOP footprints.
• Temperature Range Specified for operation from −40°C to 85°C (TA), supporting deployment in extended-temperature environments.

Typical Applications

• Embedded non-volatile storage — Provides parallel-access flash capacity for embedded systems that require dedicated non-volatile memory for firmware, data logging, or code shadowing.
• Industrial control — The −40°C to 85°C operating range and parallel interface make it suitable for industrial controllers and equipment operating across extended temperatures.
• Consumer and appliance electronics — Mid-density NAND flash in a TSOP package for consumer devices and appliances that use parallel flash for local storage or firmware.

Unique Advantages

• Mid-density storage: 512 Mbit capacity offers a balance between footprint and storage density for designs needing substantial non-volatile memory without large-package complexity.
• Deterministic timing: 50 ns access and write cycle times provide predictable performance for parallel memory architectures.
• Flexible power envelope: 2.7 V–3.6 V supply compatibility aligns with common 3 V system rails, simplifying power design.
• Standard TSOP package: 48-TSOP (0.724", 18.40 mm width) packaging enables integration on boards using industry-standard TSOP footprints.
• Extended temperature capability: −40°C to 85°C operating range supports deployment in environments with wide temperature variation.

Why Choose IC FLASH 512MBIT PARALLEL 48TSOP?

The NAND512W4A0AN6E positions itself as a practical parallel NAND flash option for designs that require 512 Mbit of non-volatile storage with deterministic access timing and broad temperature tolerance. Its 32M × 16 organization, 50 ns access time, and 2.7 V–3.6 V supply range make it suitable for systems that rely on parallel flash for firmware, code shadowing, or data storage.

Engineers designing embedded, industrial, or consumer products will find the device’s combination of capacity, timing, and TSOP packaging useful for integrating parallel flash without extensive redesign. The specified operating limits and package dimensions provide predictable behavior for long-term deployments where voltage range and temperature resilience matter.

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