NAND512W3A2SZA6E
| Part Description |
IC FLASH 512MBIT PAR 63VFBGA |
|---|---|
| Quantity | 768 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 63-VFBGA (9x11) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 63-TFBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND512W3A2SZA6E – IC FLASH 512MBIT PAR 63VFBGA
The NAND512W3A2SZA6E is a 512 Mbit NAND flash memory device in a parallel interface configuration. It implements NAND flash architecture with an 8-bit data organization (64M × 8) and is supplied in a 63-ball VFBGA package (9 × 11).
This device targets systems that require non-volatile parallel memory with defined timing and power requirements, offering a 2.7 V to 3.6 V supply range and an extended ambient operating temperature range of −40°C to 85°C.
Key Features
- Memory Core NAND flash non-volatile memory organized as 64M × 8 for a total capacity of 512 Mbit.
- Interface Parallel memory interface suitable for designs that use parallel NAND flash connectivity.
- Performance Access time of 50 ns and a write cycle time (word/page) of 50 ns for predictable timing characteristics.
- Supply Voltage Operates from 2.7 V to 3.6 V, matching common 3 V system rails.
- Package 63-ball VFBGA (63-TFBGA) package in a 9 × 11 grid, providing a compact board footprint.
- Operating Temperature Specified for ambient temperatures from −40°C to 85°C (TA).
Typical Applications
- Parallel NAND storage systems Used where a 512 Mbit parallel NAND flash device is required for non-volatile data or code storage.
- Embedded system memory Integrates into designs that accept a parallel flash interface and need defined access and write timing.
- Board-level memory modules Suitable for PCB implementations that require a compact BGA-mounted NAND flash component.
Unique Advantages
- 512 Mbit density: Provides mid-range non-volatile storage capacity in a single device for consolidated memory needs.
- Parallel interface compatibility: Enables integration into platforms designed for parallel NAND flash without serial-interface conversion.
- Deterministic timing: 50 ns access and write-cycle times support predictable memory access performance.
- Wide supply tolerance: 2.7 V to 3.6 V operation aligns with common 3 V system power rails.
- Compact BGA footprint: 63-ball VFBGA (9 × 11) packaging reduces board area while maintaining a robust ball-grid connection.
- Extended ambient range: Specified for −40°C to 85°C to support a broad set of environmental conditions.
Why Choose IC FLASH 512MBIT PAR 63VFBGA?
The NAND512W3A2SZA6E combines mid-density NAND flash capacity with a parallel interface and compact VFBGA packaging, delivering a straightforward non-volatile memory option for designs that require predictable access and write timing. Its 2.7 V–3.6 V supply range and −40°C to 85°C ambient rating make it suitable for systems operating across a wide range of conditions.
This device is well suited to engineers and procurement teams specifying parallel NAND flash for embedded systems, board-level memory modules, and other applications where package density, supply compatibility, and defined timing are primary selection criteria.
Request a quote or contact sales to inquire about availability, pricing, and lead times for the NAND512W3A2SZA6E.
