NAND512W3A2DZA6E

The NAND512W3A2DZA6E is a non-volatile NAND flash memory device with a 512 Mbit capacity organized as 64M × 8. It provides a parallel memory interface in a 63‑VFBGA (9×11) package for board-level integration.

Key electrical and operational characteristics include a supply voltage range of 2.7 V to 3.6 V, an access time of 50 ns, a write cycle time (word/page) of 50 ns, and an operating temperature range of −40°C to 85°C (TA).

Key Features

• Memory Core Non-volatile NAND flash technology with 512 Mbit capacity organized as 64M × 8.
• Interface Parallel memory interface suitable for parallel bus memory implementations.
• Performance 50 ns access time and 50 ns write cycle time (word/page) for deterministic memory access and programming timing.
• Power Wide supply voltage range from 2.7 V to 3.6 V to accommodate common 3 V power rails.
• Package 63‑VFBGA (9×11) package case providing a compact BGA footprint for surface-mount assembly.
• Temperature Range Rated for operation from −40°C to 85°C (TA) for extended environmental coverage.
• Memory Format & Mounting FLASH memory format, non-volatile, intended for surface-mount PCB integration.

Unique Advantages

• 512 Mbit density: Provides substantial non-volatile storage in a single device for code and data retention.
• Parallel interface: Enables direct integration into parallel-memory architectures without protocol translation.
• Fast access and write timing: 50 ns access and write cycle times support predictable memory timing requirements.
• Flexible power support: 2.7–3.6 V supply compatibility eases power supply selection and system integration.
• Compact BGA package: 63‑VFBGA (9×11) minimizes board area while supporting surface-mount assembly.
• Extended operating range: −40°C to 85°C rating supports a wide range of ambient conditions.

Why Choose NAND512W3A2DZA6E?

The NAND512W3A2DZA6E combines a 512 Mbit NAND flash core with a parallel interface, compact 63‑VFBGA package, and concrete electrical characteristics—including 50 ns access and write timings and a 2.7–3.6 V supply range—making it suitable for designs that require straightforward integration of non-volatile parallel memory. Its operating temperature range of −40°C to 85°C provides options for deployment across varied ambient conditions.

This device is appropriate for engineers and procurement teams specifying parallel NAND flash where defined timing, supply voltage compatibility, and a compact BGA footprint are required. The explicit electrical and mechanical specifications support predictable system design and component selection.

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