NAND512W3A2BZA6E

The NAND512W3A2BZA6E is a 512 Mbit non-volatile NAND flash memory organized as 64M x 8, supplied in a 63-VFBGA package (8.5 × 15 mm). It implements a parallel NAND interface and is targeted for mass storage applications and embedded systems requiring dense, low-voltage flash memory.

Designed for system boot and data storage, the device offers fast sequential access and standard NAND features such as copy-back programming and automatic page 0 read at power-up to support system boot workflows.

Key Features

• Memory Core  512 Mbit NAND flash organized as 64M × 8 with x8 bus width; page size for x8 devices is 512 bytes plus 16 spare bytes.
• Interface  Parallel NAND interface with multiplexed address/data pins and pinout compatibility across densities for straightforward board integration.
• Performance  Sequential access down to 50 ns (min) and random page read typical/max values documented; page program time typical 200 µs and write-cycle timing supports 50 ns word/page cycles.
• Power  3.0 V device supply range: 2.7 V to 3.6 V for compatibility with common system rails.
• Package  63-VFBGA package, 8.5 × 15 mm footprint, suitable for compact board layouts.
• Reliability & Data Integrity  Designed for 100,000 program/erase cycles and 10 years data retention; includes hardware data protection (program/erase locked during power transitions) and a status register for operation monitoring.
• System Features  Copy-back program mode for fast internal page-to-page transfer, fast block erase (typical 2 ms), electronic signature, serial number option and automatic page 0 read at power-up for boot support.
• Development Support  Datasheet notes availability of ECC models, bad block management and wear-leveling algorithms, demo hardware and reference software to assist integration and validation.
• Operating Range  Specified operating ambient temperature range of −40 °C to 85 °C (TA) for a wide range of environments.

Typical Applications

• Mass storage devices  Dense NAND array and spare-area architecture provide cost-effective storage for consumer and embedded mass-storage applications.
• Embedded system boot memory  Automatic page 0 read at power-up option enables boot-from-NAND scenarios for embedded platforms.
• File-system and data logging  512 Mbit capacity with spare area supports file-system structures and wear management for data logging applications.

Unique Advantages

• High-density storage: 512 Mbit in a compact VFBGA package reduces board area while providing significant non-volatile capacity.
• Parallel NAND interface: x8 bus and multiplexed address/data reduce external buffering requirements and simplify host interface design.
• Boot support built-in: Automatic page 0 read at power-up facilitates system boot without additional boot ROM.
• Robust endurance and retention: 100,000 program/erase cycles and 10 years data retention support long-term field operation and data integrity.
• Design & validation resources: ECC models, wear-leveling and bad-block management algorithms, plus demo hardware and reference software streamline development and bring-up.
• Wide supply and temperature window: 2.7 V–3.6 V supply range and −40 °C to 85 °C operating range fit common system power rails and environmental requirements.

Why Choose IC FLASH 512MBIT PAR 63VFBGA?

The NAND512W3A2BZA6E positions itself as a high-density, parallel NAND flash option for designers needing compact, boot-capable non-volatile storage. Its combination of 512 Mbit capacity, fast sequential access, copy-back programming and power-up boot support addresses both mass-storage and embedded system requirements.

With documented endurance (100,000 P/E cycles), long data retention, and available development tools (ECC models, wear-leveling and demo hardware), this device is suitable for engineers seeking a verifiable solution for storage, boot memory and data-logging applications where footprint, integration and data integrity are priorities.

Request a quote or submit a product inquiry to receive pricing, availability and integration support for the NAND512W3A2BZA6E.