NAND512W3A2DN6E
| Part Description |
IC FLASH 512MBIT PARALLEL 48TSOP |
|---|---|
| Quantity | 209 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND512W3A2DN6E – IC FLASH 512Mbit PARALLEL 48-TSOP
The NAND512W3A2DN6E is a 512 Mbit non-volatile NAND flash memory device with a parallel interface and 64M × 8 memory organization. It delivers read and program timing characteristics suitable for systems that require parallel NAND storage in a compact 48-TSOP package.
Designed for use where a 2.7 V to 3.6 V supply and an extended operating temperature range are required, the device supports board-level integration with a 48-TFSOP (0.724", 18.40 mm width) footprint.
Key Features
- Memory Type & Technology 512 Mbit NAND flash memory implemented as 64M × 8 organization for byte-oriented parallel access.
- Interface Parallel memory interface for direct byte-wide system integration.
- Performance / Timing 50 ns access time and 50 ns write cycle time (word/page) to support deterministic read and program operations.
- Voltage Supply Operates from 2.7 V to 3.6 V, matching common 3 V system power rails.
- Package 48-TFSOP (48-TSOP) package with a 0.724" (18.40 mm) width for compact PCB mounting.
- Operating Temperature Rated for −40°C to 85°C ambient temperature (TA) for extended-temperature applications.
Typical Applications
- Parallel NAND storage systems — Used where a parallel flash interface and byte-wide memory organization are required.
- Firmware and data retention in extended-temperature environments — Suitable for designs operating across −40°C to 85°C.
- Space-constrained PCB designs — 48-TSOP package (0.724", 18.40 mm width) enables compact board-level integration.
Unique Advantages
- 512 Mbit capacity in a compact package: Provides substantial non-volatile storage while maintaining a small 48-TSOP footprint for space-limited designs.
- Byte-oriented organization (64M × 8): Simplifies system interfacing with byte-wide parallel access.
- Deterministic timing: 50 ns access and 50 ns write cycle times provide predictable read and program performance.
- Wide supply voltage range: 2.7 V to 3.6 V operation aligns with common 3 V system rails for flexible power architectures.
- Extended operating temperature: −40°C to 85°C rating supports deployment in environments with wide temperature variation.
Why Choose IC FLASH 512MBIT PARALLEL 48TSOP?
The NAND512W3A2DN6E is positioned for systems that need parallel NAND flash memory with clear timing characteristics, a standard byte-wide organization, and a compact TSOP package. Its electrical and thermal ratings make it suitable for designs that require a 3 V supply range and extended ambient temperature support.
This device is a practical choice for engineers and procurement teams looking for a straightforward parallel NAND flash solution that balances capacity, predictable timing, and board-space efficiency.
Request a quote or contact sales to discuss availability, lead times, and pricing for the NAND512W3A2DN6E.
