NAND512W3A2SN6E

The NAND512W3A2SN6E is a 512 Mbit non-volatile NAND flash memory in a parallel interface format. It implements NAND flash architecture with a 64M x 8 organization and is supplied in a 48-TFSOP / 48-TSOP package.

Designed for electronic systems requiring parallel flash storage, the device offers standard NAND performance characteristics and a supply voltage range suitable for many embedded applications.

Key Features

• Technology  NAND flash non-volatile memory providing persistent data storage in a 64M x 8 organization.
• Memory Size & Organization  512 Mbit capacity organized as 64M x 8 for byte-oriented parallel access patterns.
• Interface  Parallel memory interface for integration with parallel-memory controllers and legacy parallel bus designs.
• Performance  Access time: 50 ns; write cycle time (word/page): 50 ns—specs suitable for typical parallel NAND read/write operations.
• Power  Supply voltage range: 2.7 V to 3.6 V to support common 3 V system rails.
• Package  48-TFSOP (0.724", 18.40 mm width) / 48-TSOP footprint for surface-mount PCB implementations.
• Operating Temperature  Rated for −40°C to 85°C (TA) to support a wide range of ambient conditions.

Typical Applications

• Embedded Systems  Parallel NAND storage for firmware, code shadowing, and data retention in microcontroller- or processor-based designs.
• Consumer Electronics  Non-volatile storage for devices that require compact flash memory in a surface-mount TSOP package.
• Industrial Control  Persistent storage in control and instrumentation equipment operating across a −40°C to 85°C ambient range.

Unique Advantages

• 512 Mbit capacity in a compact TSOP  Provides substantial non-volatile storage while maintaining a small 48-pin surface-mount footprint.
• Parallel interface simplicity  Byte-organized 64M x 8 layout and parallel access simplify integration with parallel memory controllers.
• Deterministic access and write timings  50 ns access and 50 ns write-cycle specifications support predictable memory performance in system design.
• Wide supply voltage window  Operates from 2.7 V to 3.6 V to match common 3 V system rails and tolerate supply variations.
• Extended operating temperature  Rated from −40°C to 85°C for deployment in a broad range of environmental conditions.

Why Choose IC FLASH 512MBIT PARALLEL 48TSOP?

The NAND512W3A2SN6E combines a 512 Mbit NAND architecture with a parallel interface and compact 48-TSOP package to address designs that need solid non-volatile storage in a surface-mount form factor. Its defined access and write timings, together with a 2.7 V–3.6 V supply range and −40°C to 85°C operating window, make it suitable for a variety of embedded and industrial applications.

Manufactured by Micron Technology Inc., this device is positioned for designers seeking a straightforward parallel NAND flash option with clear, verifiable specifications for integration into system-level memory solutions.

Request a quote or submit an availability inquiry to receive pricing and lead-time information for the NAND512W3A2SN6E.