NAND512W3A2SN6F TR
| Part Description |
IC FLASH 512MBIT PARALLEL 48TSOP |
|---|---|
| Quantity | 520 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 50 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 50 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64M x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of NAND512W3A2SN6F TR – IC FLASH 512MBIT PARALLEL 48TSOP
The NAND512W3A2SN6F TR is a 512 Mbit parallel NAND flash memory device from Micron Technology Inc. It implements NAND flash architecture organized as 64M × 8, providing non-volatile storage in a parallel interface format.
Designed for systems that require parallel-access non-volatile memory, the device offers a 50 ns access time, a 2.7 V to 3.6 V supply range, and an extended operating temperature range of −40°C to 85°C. It is supplied in a 48-TFSOP / 48-TSOP package suitable for board-level integration.
Key Features
- Memory Type Non-volatile NAND flash memory organized as 64M × 8 for 512 Mbit total capacity.
- Interface Parallel memory interface enabling byte-wide access to stored data.
- Performance 50 ns access time and 50 ns write cycle time (word/page) for predictable read/write latency.
- Power Operates from a 2.7 V to 3.6 V supply range to match common system voltage domains.
- Package Available in a 48-TFSOP (0.724", 18.40 mm width) / 48-TSOP supplier device package for compact board-level mounting.
- Temperature Range Rated for operation from −40°C to 85°C (TA) to support extended-temperature applications.
Typical Applications
- Embedded Storage — Provides non-volatile code and data storage for embedded systems that require parallel flash memory.
- Consumer Electronics — Used where parallel NAND flash is needed for firmware, content storage, or system-level non-volatile memory.
- Industrial Systems — Suitable for industrial devices that require extended operating temperature support and robust non-volatile storage.
Unique Advantages
- Parallel Interface Compatibility: Parallel NAND interface simplifies integration with controllers and designs that require byte-wide flash access.
- Predictable Performance: 50 ns access and write cycle times provide consistent timing characteristics for system design.
- Wide Supply Voltage Range: 2.7 V to 3.6 V compatibility supports common 3 V system domains and aids power-supply flexibility.
- Extended Temperature Support: −40°C to 85°C operating range enables deployment in environments with temperature extremes.
- Compact TSOP Packaging: 48-TFSOP / 48-TSOP package (0.724", 18.40 mm width) supports space-constrained PCB layouts.
Why Choose NAND512W3A2SN6F TR?
The NAND512W3A2SN6F TR offers a straightforward parallel NAND flash solution with a 512 Mbit capacity, predictable 50 ns timing, and flexible 2.7 V–3.6 V operation. Its TSOP48 package and extended temperature rating make it a practical choice for embedded and industrial designs that require reliable non-volatile storage.
Manufactured by Micron Technology Inc., this device suits engineers and procurement teams specifying parallel NAND memory for systems where capacity, timing consistency, and board-level packaging are primary selection criteria.
Request a quote or contact sales to discuss pricing, availability, and lead times for the NAND512W3A2SN6F TR.
