NAND512W3A0AV6E

The NAND512W3A0AV6E is a 512 Mbit non-volatile NAND flash memory organized as 64M x 8 with a parallel x8 interface. It delivers a high-density storage option in a 48-WSOP package and supports standard NAND features such as multiplexed address/data and pinout compatibility across densities.

Designed for mass storage and embedded boot applications, the device offers fast sequential access and on-chip functions that simplify system boot and memory management while operating from a 2.7 V to 3.6 V supply over a -40 °C to 85 °C ambient range.

Key Features

• Memory Core 512 Mbit NAND flash organized as 64M x 8 with a page size of 528 bytes (512 + 16 spare) for x8 devices.
• Interface Parallel NAND interface with multiplexed address/data signals and x8 bus width; pinout compatible across the NAND density family.
• Performance Sequential access down to 50 ns (min) and random page access up to 12 µs (max). Typical page program time 200 µs and typical block erase time 2 ms.
• Reliability & Data Integrity Rated for 100,000 program/erase cycles and 10 years data retention. Built-in status register, electronic signature and bad block management support.
• Power 3.0 V device operating range: 2.7 V to 3.6 V. Hardware data protection locks program/erase operations during power transitions.
• Boot & System Support Optional automatic read of page 0 at power-up to support boot-from-NAND and automatic memory download scenarios.
• Package & Temperature Available in a 48-WSOP package (12 × 17 mm) with an operating ambient temperature range of -40 °C to 85 °C.
• Development Resources Supported by ECC models, bad-block management and wear-leveling algorithms, and file system / OS native reference software for system integration.

Typical Applications

• Mass storage systems — High-density NAND for file-based storage implementations and cost-effective mass storage applications.
• Embedded boot memory — Automatic page 0 read at power-up simplifies system boot and initial code download from NAND.
• Firmware and data logging — Non-volatile storage for firmware images and long-term data retention with up to 100,000 program/erase cycles.

Unique Advantages

• High-density storage in a compact package: 512 Mbit capacity in a 48-WSOP footprint reduces board area for high-capacity designs.
• Fast sequential access: 50 ns sequential access enables efficient block and page transfers for mass storage tasks.
• Boot-friendly options: Automatic power-up page 0 read supports straightforward boot-from-NAND implementations without external buffering.
• Robust data longevity: Specified 100,000 program/erase cycles and 10 years retention support durable embedded storage needs.
• System integration support: ECC models, bad-block management and file-system reference software reduce development effort for reliable storage systems.

Why Choose NAND512W3A0AV6E?

The NAND512W3A0AV6E positions itself as a high-density, engineer-friendly NAND flash option for designs that require compact, parallel-access non-volatile storage. With fast sequential access, on-chip features for boot support, and development resources for ECC and wear-leveling, it supports efficient integration into mass storage and embedded systems.

This device is suitable for projects that need a balance of capacity, performance and reliability within a standard 48-WSOP package and a 2.7 V–3.6 V supply range, operating across a broad industrial temperature window.

Request a quote or submit an inquiry for pricing and availability to evaluate NAND512W3A0AV6E for your next design.