NAND512W3A0AN6

The NAND512W3A0AN6 is a 512 Mbit NAND flash memory organized as 64M x 8 with a parallel x8 interface in a 48‑TSOP package. It provides non‑volatile storage optimized for mass storage and embedded boot applications where a standard NAND interface and robust data retention are required.

Designed for 3.0V systems, the device operates from 2.7V to 3.6V and supports system temperatures from -40°C to 85°C, delivering fast sequential access and common NAND features such as copy‑back programming and automatic page 0 read at power‑up.

Key Features

• Memory Architecture — 512 Mbit NAND flash organized as 64M × 8 (x8 bus width) with page and block structures defined for efficient mass storage.
• Interface — Parallel NAND interface with multiplexed address/data pins and pinout compatibility across densities to simplify board design.
• Performance — Sequential access timing down to 50 ns and random page access up to 12 μs (max); typical page program time 200 μs and typical block erase time 2 ms.
• Power — 3.0V device operating range: VDD = 2.7 V to 3.6 V to match common 3V system rails.
• Data Integrity & Endurance — Specified for 100,000 program/erase cycles and 10 years data retention to support long‑lived storage applications.
• Boot and System Support — Automatic page 0 read at power‑up supports boot from NAND; includes status register, electronic signature and serial number options.
• Hardware Protection — Program/erase operations are locked during power transitions to protect against data corruption.
• Package & Temperature — Supplied in a 48‑TSOP (0.724", 18.40 mm width) package and rated for -40°C to 85°C ambient operation.
• Developer Resources — Development tools and reference materials available including ECC models, bad block management and wear‑leveling software models and OS file system references.

Typical Applications

• Mass Storage Devices — Cost‑effective NAND array suitable for general purpose mass storage implementations where a parallel NAND interface is required.
• Embedded System Boot Memory — Automatic page 0 read at power‑up enables boot from NAND for embedded platforms.
• File System Storage — Page/block organization and available ECC/reference software support file system implementations and OS native storage solutions.

Unique Advantages

• 512 Mbit x8 Density: Provides a compact, byte‑oriented NAND capacity for applications needing mid‑range non‑volatile storage.
• Fast Sequential Access: 50 ns sequential access supports responsive read operations in systems that require quick data transfers.
• Robust Endurance and Retention: 100,000 program/erase cycles and 10 years retention support long service life and reliable data storage.
• Boot Support on Power‑Up: Automatic page 0 read at power‑up simplifies system initialization and bootloader storage.
• Power‑Rail Flexibility: 2.7 V to 3.6 V supply range makes integration straightforward in common 3.0V platforms.
• Hardware Data Protection: Program/erase locking during power transitions reduces the risk of corruption during unstable power events.

Why Choose NAND512W3A0AN6?

The NAND512W3A0AN6 positions itself as a practical 512 Mbit parallel NAND solution for designs requiring a standard x8 NAND interface, mid‑density storage, and system boot capability. Its combination of fast sequential access, robust endurance specifications and hardware protection features makes it suitable for embedded systems and storage applications that need predictable NAND behavior.

With a 48‑TSOP footprint, wide 2.7 V–3.6 V operating range and supported development tools for ECC, bad block management and file system integration, this device provides a verifiable path to deployment where long‑term data retention and manufacturable NAND management are required.

Request a quote or submit a parts inquiry to receive pricing, lead‑time and availability information for the NAND512W3A0AN6.