NAND512R3A2SZA6E

The NAND512R3A2SZA6E is a 512 Mbit parallel NAND flash memory device in a 63-VFBGA (9×11) package from Micron Technology Inc. It implements non-volatile NAND flash architecture organized as 64M × 8 for system storage and code retention.

With a parallel memory interface, low supply voltage range and industrial operating temperature, this device is intended for designs that require compact, parallel-access NAND storage with defined timing and power characteristics.

Key Features

• Memory Core 512 Mbit NAND flash organized as 64M × 8, providing byte-wide parallel data access.
• Interface Parallel memory interface suitable for systems designed for parallel NAND connectivity.
• Performance 50 ns access time and 50 ns write cycle time (word/page) to support predictable read and program timing.
• Power Operates from a low supply voltage range of 1.7 V to 1.95 V, enabling use in low-voltage systems.
• Package 63-TFBGA (63-VFBGA, 9×11) package for compact board-level integration where area and height are considerations.
• Operating Temperature Rated for −40 °C to 85 °C ambient (TA), supporting a broad industrial temperature range.

Typical Applications

• Embedded Storage — Provides 512 Mbit of non-volatile storage for embedded platforms that require parallel NAND flash for code or data retention.
• Firmware and Boot Code — Suited for storing firmware or boot images where parallel access and defined program timing are required.
• Data Logging — Can be used in systems that require persistent log storage with controlled write timing.
• Consumer and Industrial Electronics — Applicable where compact BGA packaging and industrial temperature range are needed for board-level NAND flash integration.

Unique Advantages

• Parallel Access Efficiency: Byte-wide (×8) organization and parallel interface enable straightforward integration into existing parallel-memory designs.
• Compact BGA Package: 63-VFBGA (9×11) reduces PCB footprint while providing a board-level NAND flash solution.
• Predictable Timing: 50 ns access and write-cycle timings support deterministic read/program operations in system designs.
• Low-Voltage Operation: 1.7 V–1.95 V supply range allows operation in low-voltage systems to help reduce overall power budgets.
• Wide Temperature Range: −40 °C to 85 °C rating supports deployment in environments requiring industrial temperature tolerance.

Why Choose IC FLASH 512MBIT PAR 63VFBGA?

The NAND512R3A2SZA6E delivers a compact, parallel NAND flash option with clearly specified timing, low-voltage operation, and an industrial temperature range. Its 64M × 8 organization and 63-VFBGA package make it suitable for designs that need byte-wide parallel storage with minimal board area impact.

This device is appropriate for engineers and procurement teams specifying reliable non-volatile memory for embedded systems, firmware storage, and data-logging applications where predictable access and program timings, low supply voltage, and wide temperature operation are required.

Request a quote or contact the sales team to discuss pricing, availability, and lead times for the NAND512R3A2SZA6E.