NAND512R3A2SZA6F

The NAND512R3A2SZA6F is a 512 Mbit non-volatile FLASH NAND memory device provided by Micron Technology Inc. It is organized as 64M × 8 and uses a parallel memory interface to deliver straightforward integration into systems requiring parallel FLASH storage.

With 50 ns access and write-cycle timings, a low-voltage supply range, and a compact BGA package, this device is intended for designs that need durable non-volatile storage with defined timing and thermal characteristics.

Key Features

• Memory Type & Technology Non-volatile FLASH - NAND memory offering 512 Mbit capacity, organized as 64M × 8.
• Interface & Organization Parallel memory interface for direct connection to parallel memory buses; memory organization specified as 64M × 8.
• Performance Access time of 50 ns and write-cycle time (word/page) of 50 ns, providing defined read and write timing parameters.
• Power Operating voltage range of 1.7 V to 1.95 V to support low-voltage system domains.
• Package Supplied in a 63-TFBGA / 63-VFBGA (9×11) package suitable for space-constrained board layouts.
• Operating Temperature Rated for operation from −40°C to 85°C (TA), supporting a broad ambient temperature range.

Typical Applications

• Embedded memory storage Provides 512 Mbit of non-volatile FLASH for systems that require parallel-access storage for code or data.
• System firmware storage Stores firmware images and boot code where defined access timing and parallel interface are required.
• Board-level integration Compact 63-VFBGA (9×11) package enables use in designs with limited PCB area and standard BGA assembly.

Unique Advantages

• 512 Mbit capacity: Provides ample non-volatile storage in a single device organized as 64M × 8, reducing the need for multiple components.
• Defined timing characteristics: 50 ns access and 50 ns write-cycle times allow predictable performance budgeting in system designs.
• Low-voltage operation: 1.7 V to 1.95 V supply range supports integration into low-voltage power architectures.
• Space-efficient package: 63-VFBGA (9×11) footprint minimizes board area while maintaining BGA mounting robustness.
• Wide ambient temperature: −40°C to 85°C rating supports designs operating across common industrial temperature ranges.
• Manufacturer: Supplied by Micron Technology Inc., a known memory supplier listed in the product data.

Why Choose IC FLASH 512MBIT PAR 63VFBGA?

The NAND512R3A2SZA6F delivers a straightforward, parallel-access NAND FLASH solution with 512 Mbit capacity, defined 50 ns timing for reads and writes, and a low-voltage supply range (1.7 V–1.95 V). Its 63-VFBGA (9×11) package and −40°C to 85°C operating range make it suitable for designs where board space, voltage domain constraints, and ambient temperature range are key considerations.

This device is appropriate for engineers specifying non-volatile parallel memory from Micron Technology Inc. who require explicit timing parameters, compact packaging, and low-voltage operation for their system-level storage needs.

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