NAND512R3A2SZAXE

The NAND512R3A2SZAXE is a 512 Mbit non-volatile FLASH memory device implemented in NAND technology and organized as 64M × 8. It provides parallel memory access and is offered in a 63-ball VFBGA/TFBGA package.

Key electrical and timing characteristics include a supply voltage range of 1.7 V to 1.95 V, a 50 ns access time, and a 50 ns write cycle time for word/page operations. The device is specified for operation from −40°C to 85°C (TA).

Key Features

• Core / Technology NAND flash non-volatile memory technology providing persistent data storage in a 512 Mbit capacity.
• Memory Organization Organized as 64M × 8, suitable for byte-wide parallel access.
• Interface Parallel memory interface for direct parallel read/write transactions.
• Performance 50 ns access time and 50 ns write cycle time (word/page) for deterministic read and write timing.
• Power Operates from 1.7 V to 1.95 V supply voltage.
• Package Supplied in a 63-ball VFBGA (9 × 11) package; package case also listed as 63-TFBGA for board-level integration.
• Temperature Range Specified operating ambient temperature range of −40°C to 85°C (TA).

Typical Applications

• Parallel non-volatile storage Provides 512 Mbit of persistent storage where parallel-access NAND flash is required for code or data retention.
• Embedded system memory Used in designs that require a compact BGA package and a 64M × 8 memory organization for byte-wide interfacing.
• Industrial temperature designs Suitable for systems that demand operation across a −40°C to 85°C ambient temperature range.

Unique Advantages

• 512 Mbit density: Offers a high-capacity NAND flash option in a single device footprint.
• Byte-wide organization: 64M × 8 layout simplifies parallel data bus integration with byte-oriented controllers.
• Parallel interface: Enables direct parallel read/write access without additional serial-to-parallel conversion.
• Low-voltage operation: 1.7 V to 1.95 V supply reduces system power domain requirements where low-voltage NAND is needed.
• BGA package options: 63-ball VFBGA (9 × 11) / 63-TFBGA packaging supports compact board-level mounting and predictable footprint.
• Industrial temperature rating: Specified for −40°C to 85°C operation for use in temperature-varied environments.

Why Choose IC FLASH 512MBIT PAR 63VFBGA?

The NAND512R3A2SZAXE positions itself as a straightforward, parallel-access NAND flash device delivering 512 Mbit of non-volatile storage with defined timing and voltage characteristics. Its 64M × 8 organization, 50 ns access and write cycle times, and low-voltage supply make it suitable for designs requiring deterministic timing and compact BGA packaging.

This device is appropriate for engineers and procurement teams specifying byte-oriented parallel NAND storage in systems that operate across a −40°C to 85°C ambient range. Its combination of capacity, interface style, electrical range, and package format supports scalable integration into board-level designs.

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