NAND512W3A0AN6E

The NAND512W3A0AN6E is a 512 Mbit non-volatile NAND flash memory organized as 64M × 8 with a parallel NAND interface in a 48‑TSOP package. It targets mass storage and embedded boot/firmware applications where high density, NAND architecture and a standard TSOP48 footprint are required.

Built for 3.0V systems (VDD = 2.7 V to 3.6 V) and rated for industrial operating temperatures (−40 °C to 85 °C), the device provides page-level read/program operations, block erase, and on‑chip features to support system boot and data integrity.

Key Features

• Memory Core — 512 Mbit NAND flash organized as 64M × 8 with x8 bus width and parallel NAND interface.
• Page and Block Architecture — x8 device page size: 512 + 16 spare bytes; block size: 16K + 512 spare bytes, suitable for typical NAND mass storage layouts.
• Read / Program / Erase Performance — Random page read up to 12 μs (max), sequential access 50 ns (min); typical page program time ~200 μs and typical block erase time ~2 ms.
• Endurance & Data Retention — Specified for 100,000 program/erase cycles and 10 years data retention.
• Power and Timing — Supply voltage 2.7 V to 3.6 V; listed access and write cycle timing includes 50 ns values for sequential access and write cycle time (word/page).
• On‑chip Functionality — Features include copy‑back program mode, status register, electronic signature, chip‑enable “don’t care” option, and automatic page‑0 read at power‑up for boot support.
• System Reliability — Hardware data protection locks program/erase during power transitions; includes support for ECC, bad block management and wear leveling in provided development toolset.
• Package and Temperature — 48‑TSOP (48‑TFSOP / 48‑TSOP footprint) package; operating range −40 °C to 85 °C.

Typical Applications

• Mass Storage Applications — High‑density NAND for file and data storage in cost‑sensitive embedded products.
• Embedded Boot / Firmware Storage — Automatic page‑0 read at power‑up enables direct boot and automatic memory download for firmware devices.
• Portable and Consumer Devices — Non‑volatile program and data storage where compact TSOP48 packaging and 3.0V supply compatibility are required.
• Development and Evaluation — Supported by ECC models, bad block management, wear leveling algorithms and PC demo boards for software and hardware development.

Unique Advantages

• High Density in Standard Footprint: 512 Mbit capacity in a 48‑TSOP package provides large storage without unconventional packaging.
• Boot‑Ready Behavior: Automatic page‑0 read at power‑up simplifies system boot and firmware download flows.
• Proven NAND Feature Set: Copy‑back program, status register and electronic signature facilitate efficient block/page management and system integration.
• Robust Data Integrity: 100,000 P/E cycles and 10‑year retention combined with hardware protection during power transitions support long term reliability.
• Design and Development Support: Provided ECC software/hardware models and bad block/wear leveling algorithms help accelerate integration and validation.
• Wide 3.0V Compatibility: Operates across 2.7 V to 3.6 V supplies to match common 3.0V embedded system rails.

Why Choose NAND512W3A0AN6E?

The NAND512W3A0AN6E delivers a balanced combination of density, standard packaging and NAND feature set geared toward mass storage and embedded boot/firmware applications. Its x8 NAND organization, page/block architecture and on‑chip behaviors (including automatic page‑0 read and copy‑back) make it suitable for systems that require direct boot capability and efficient page/block operations.

With industrial temperature range, a broad 3.0V supply window, endurance and retention specifications, and available development tools for ECC and block management, the device is positioned for designers seeking a reliable NAND solution that integrates into standard TSOP48 footprints and supported development ecosystems.

Request a quote or submit an inquiry to obtain pricing, availability and lead‑time information for the NAND512W3A0AN6E.