TH58TEG8H2HBA89

The TH58TEG8H2HBA89 is a non-volatile SLC NAND flash memory device from Kioxia America, Inc. It is specified as a 256 Gbit FLASH memory organized as 32G × 8 and implements single-level cell (SLC) NAND architecture.

Designed for commercial and industrial storage applications, the device provides SLC-level read/write performance and endurance characteristics described in the manufacturer literature, and is offered in a compact 132‑BGA package with an SPI memory interface and a 2.7 V–3.6 V supply range.

Key Features

• Memory Type Non-volatile FLASH – Single-Level Cell (SLC) NAND architecture for single-bit-per-cell storage.
• Density & Organization 256 Gbit capacity organized as 32G × 8 for high-density storage implementations.
• Interface SPI memory interface as specified for serial connectivity.
• Supply Voltage Operates from 2.7 V to 3.6 V to match common system power rails.
• Package 132‑BGA supplier device package for compact board-level integration.
• Operating Temperature Rated for 0 °C to 70 °C (commercial temperature range).
• Form Factor FLASH memory format and non-volatile mounting type for persistent data retention.

Typical Applications

• Memory Cards Integration into removable storage media where SLC endurance and performance are required.
• Solid-State Drives (SSDs) Use in SSD controller designs and embedded storage modules that benefit from SLC characteristics.
• Industrial Equipment Embedded storage for industrial control and equipment within the stated 0 °C–70 °C operating range.
• Commercial Storage Systems Embedded storage subsystems requiring a compact 132‑BGA package and SPI interface.

Unique Advantages

• Single-Level Cell Endurance: SLC architecture provides higher write endurance and consistent read/write characteristics as described in the product literature.
• High Density Organization: 256 Gbit capacity (32G × 8) enables dense storage in a compact footprint.
• Compact BGA Package: 132‑BGA package supports space-constrained PCB layouts while maintaining standard supplier device packaging.
• Flexible Power Range: 2.7 V–3.6 V operating window supports compatibility with common system power rails.
• Commercial Temperature Suitability: Rated 0 °C to 70 °C for commercial and industrial equipment applications noted in the manufacturer documentation.
• Manufacturer Lineage: Offered by Kioxia America, Inc., and described within the manufacturer's SLC NAND product literature.

Why Choose 256GB SLC NAND?

The TH58TEG8H2HBA89 is positioned for designs that require non-volatile, high-density SLC storage with predictable endurance and performance characteristics. Its 256 Gbit capacity, SPI interface, compact 132‑BGA package, and 2.7 V–3.6 V supply range make it suitable for embedded storage subsystems in commercial and industrial equipment operating between 0 °C and 70 °C.

Engineers specifying this device gain the advantages of SLC NAND architecture and documented device organization while leveraging Kioxia's product lineage and datasheet-defined specifications for integration and system design.

Request a quote or contact sales to discuss availability, lead times and integration details for TH58TEG8H2HBA89.