TH58TEG8H2HBAS9

The TH58TEG8H2HBAS9 is a non-volatile SLC NAND flash memory device manufactured by Kioxia America, Inc. It implements Single-Level Cell (SLC) NAND architecture and is offered as a 256 Gbit device organized as 32G × 8.

Designed for commercial and industrial storage applications, the device provides eMMC 5.1 interface connectivity, a 132-BGA package, and an operating range of -40°C to 85°C with a supply voltage range of 2.7V to 3.6V.

Key Features

• Memory Type SLC NAND flash memory offering single-bit-per-cell storage for the stated device capacity of 256 Gbit.
• Memory Organization Organized as 32G × 8 to match common memory mapping and controller expectations for parallel data access.
• Interface eMMC 5.1 memory interface support for embedded storage integration.
• Power Operating supply voltage range from 2.7V to 3.6V to fit standard embedded power rails.
• Package Supplied in a 132‑BGA package (132 balls) for board-level mounting and compact system integration.
• Temperature Range Rated for operation from -40°C to 85°C to support a broad set of commercial and industrial environments.
• Reliability Characteristics SLC NAND architecture cited for high read/write performance and write endurance in the manufacturer documentation.

Typical Applications

• Memory Cards Use as a storage element in removable and embedded memory card designs requiring SLC performance characteristics.
• Solid-State Drives (SSDs) Integration into SSD controllers and modules where SLC NAND is selected for performance and endurance.
• Industrial Equipment Embedded storage for industrial systems that demand non-volatile memory with extended temperature operation.
• Commercial Storage Devices General commercial storage applications that benefit from SLC read/write performance and durability.

Unique Advantages

• SLC Architecture: Single-Level Cell design provides the performance and write endurance characteristics noted by the manufacturer.
• eMMC 5.1 Interface: Standard eMMC connectivity simplifies integration with controllers and existing embedded storage ecosystems.
• Wide Operating Temperature: -40°C to 85°C rating supports deployment in a broad set of environmental conditions.
• Flexible Supply Voltage: 2.7V to 3.6V operation enables compatibility with common system power domains.
• Compact BGA Package: 132‑BGA package offers a small footprint for space-constrained board designs.
• Established Manufacturer Lineage: Product documentation highlights the vendor’s long-term development focus on flash memory technology.

Why Choose 256GB SLC NAND?

The TH58TEG8H2HBAS9 positions itself as a robust SLC NAND option for designers needing non-volatile storage with SLC-level endurance and performance characteristics, packaged in a 132‑BGA and accessible via an eMMC 5.1 interface. Its specified operating temperature range and supply voltage window make it suitable for a variety of commercial and industrial deployments.

This device is appropriate for engineers and procurement teams building storage-focused modules, SSDs, memory cards, or embedded systems that require a known SLC NAND architecture and the form-factor and electrical characteristics provided by this part. It is supported by manufacturer documentation outlining the product family and technology focus.

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