W35T25NWSFIF TR

The W35T25NWSFIF TR is a 256 Mbit non-volatile NAND SLC flash memory device with an octal SPI interface and DDR capabilities. It provides a byte-wide, octal-DDR flash architecture with built-in ECC and CRC support for high-integrity data storage.

Designed for systems that require high-speed SPI flash access and execute-in-place (XIP) operation, this device targets embedded designs needing compact, low-voltage flash storage with hardware and firmware protection features.

Key Features

• Memory Core 256 Mbit NAND SLC flash organized as 32M × 8, providing non-volatile storage in a byte-wide architecture.
• High-speed Interface Octal SPI I/O with support for Octal DDR (ODDR) and Octal SDR read commands; device supports clocking up to 200 MHz as specified.
• DDR and XIP Support Byte-wide DDR flash memory with Execute-in-Place (XIP) mode support for running code directly from flash.
• Data Integrity Built-in ECC operation and CRC features (including CRC-at-rest and CRC-in-transit modes) to help ensure data reliability.
• Interface Robustness Extended SPI modes including standard SPI, Octal SPI (OSPI), and interface recovery features such as fail/safe power-up detection and power loss interface recovery.
• Performance Fast access characteristics with an access time of 4.5 ns and typical program page write-cycle time of 1.5 ms for word/page operations.
• Low-voltage Operation Operates from 1.65 V to 2.0 V, suitable for low-voltage system designs.
• Package and Temperature Available in a 16-SOIC (300 mil, 7.50 mm width) package and rated for an operating temperature range of −40°C to 85°C.

Typical Applications

• Embedded code storage — Execute-in-Place (XIP) capability allows firmware and code to run directly from flash, reducing the need for external RAM for code storage.
• High-speed SPI storage — Octal SPI and DDR read modes support systems that require high-throughput non-volatile memory access over a compact SPI interface.
• Data integrity-critical systems — On-chip ECC and CRC modes provide enhanced error detection and correction for stored data and in-transit transfers.

Unique Advantages

• Octal DDR interface: Enables higher bandwidth SPI transfers using eight I/O lines with DDR operation for faster read performance.
• Integrated ECC and CRC: Built-in error correction and cyclic redundancy checks improve data integrity for both at-rest and in-transit data.
• Low-voltage compatibility: 1.65 V–2.0 V supply range supports integration into low-voltage embedded platforms.
• XIP-ready architecture: Execute-in-Place support simplifies system design by allowing code execution directly from flash memory.
• Compact package: 16-SOIC footprint provides a small, industry-standard package option for space-constrained boards.
• Operational range: −40°C to 85°C rating supports deployment across common commercial and industrial temperature environments.

Why Choose OCTAL FLASH, 1.8V, 256M-BIT?

The W35T25NWSFIF TR positions itself as a high-density, low-voltage octal DDR flash solution combining 256 Mbit NAND SLC memory with on-chip ECC, CRC, and XIP capabilities. Its Octal SPI interface and 200 MHz clock support enable higher throughput for firmware and data access while preserving a compact SOIC footprint.

This device is suitable for designs that require reliable, high-speed non-volatile storage with built-in data integrity features and power-up/interface recovery mechanisms. It is well-suited to embedded system designs that leverage execute-in-place functionality and low-voltage operation.

Request a quote or contact sales to discuss availability, pricing, and technical support for the W35T25NWSFIF TR.