W35T51NWTBIE TR

The W35T51NWTBIE TR is a 512 Mbit non-volatile FLASH memory device using NAND (SLC) technology with a 64M x 8 memory organization. It implements an SPI Octal I/O memory interface and is supplied in a compact 24-TFBGA (8×6) package.

Designed for embedded applications that require dense, low-voltage non-volatile storage, the device delivers up to 200 MHz clock operation, a 5 ns access time, and a specified write cycle time of 1.5 ms for word/page operations. Operating temperature is specified from -40°C to 85°C.

Key Features

• Memory Core NAND FLASH (SLC) technology with 512 Mbit capacity organized as 64M × 8, suitable for high-density non-volatile storage.
• Interface & Performance SPI – Octal I/O interface with a maximum clock frequency of 200 MHz and a 5 ns access time to support high-throughput read access.
• Write Performance Word/page write cycle time specified at 1.5 ms for reliable programming timing reference.
• Power Low-voltage operation with a supply range of 1.65 V to 2.0 V to match low-voltage system rails.
• Package & Mounting Available in a 24-TFBGA (8×6) / 24-TBGA package suitable for surface-mount, space-constrained PCB designs.
• Temperature Range Specified operating temperature from -40°C to 85°C (TA) for deployment in environments requiring extended ambient range.

Typical Applications

• Embedded Storage Use as onboard non-volatile storage for firmware, code shadowing, and look-up tables where 512 Mbit capacity and octal SPI access are required.
• Industrial Electronics Suitable for industrial controllers and equipment operating across -40°C to 85°C that need low-voltage, high-density NAND FLASH.
• Data Logging and Firmware Storage Applied where deterministic write timing (1.5 ms word/page) and SLC FLASH characteristics are required for reliable program/erase cycles.

Unique Advantages

• High-density SLC NAND: 512 Mbit (64M × 8) capacity provides substantial non-volatile storage in a single device.
• High-throughput Octal SPI: SPI Octal I/O with up to 200 MHz clock enables faster data transfer compared to narrower SPI interfaces.
• Low-voltage operation: 1.65 V to 2.0 V supply range supports designs targeting lower-power system rails.
• Compact BGA footprint: 24-TFBGA (8×6) package minimizes board area while supporting surface-mount assembly.
• Extended operating temperature: Rated for -40°C to 85°C to accommodate a wide range of ambient conditions.
• Measured programming timing: Specified write cycle time of 1.5 ms for word/page operations that designers can use for deterministic timing and scheduling.

Why Choose W35T51NWTBIE TR?

The W35T51NWTBIE TR combines SLC NAND FLASH density with an Octal SPI interface and low-voltage operation to deliver a compact, high-performance non-volatile memory option. Its 24-TFBGA packaging and -40°C to 85°C operating range make it suitable for space-constrained embedded and industrial designs that require reliable storage and efficient board integration.

Engineers specifying this device will benefit from explicit performance parameters—200 MHz clock capability, 5 ns access time, and a 1.5 ms write cycle time—allowing clear system-level timing and power budgeting for long-term deployment.

Request a quote or submit an inquiry for pricing and availability to evaluate W35T51NWTBIE TR for your next design.