W35T51NWTBIF TR

The W35T51NWTBIF TR is a 512 Mbit octal SPI flash memory device from Winbond Electronics' SpiFlash® series. It is a byte-wide, octal-DDR NAND Flash (SLC) device that provides built-in ECC and features for high-speed serial flash operation.

Designed for low-voltage 1.8V systems, the device supports Octal I/O and DDR/SDR interfaces, Execute-in-Place (XIP) operation, and interface recovery features, making it suitable for designs that require non-volatile code or data storage with robust error management.

Key Features

• Memory Core 512 Mbit Flash organized as 64M x 8 using NAND SLC technology for non-volatile storage.
• Octal SPI Interface SPI - Octal I/O support with extended SPI command sets and Octal Double Data Rate (ODDR) bus interface described in the datasheet.
• High-Speed Operation Supports up to 200 MHz clock frequency with byte-wide DDR operation and a 5 ns access time for fast read performance.
• Error Management and Data Integrity Built-in ECC operation, CRC options (CRC-At-Rest and CRC-In-Transit modes), and a Data Learning Pattern (DLP) for improved data integrity.
• Execute-in-Place (XIP) XIP mode support with NVCR and VCR configuration bits and defined recovery sequences for host/device synchronization errors.
• Power and Reliability Features Fail/safe power-up detection, interface recovery mechanisms (including power loss recovery), hardware and software reset options, and status/flag registers for operational visibility.
• Program/Erase Characteristics Write cycle time (word/page) specified at 1.5 ms and volatile/non-volatile register control for write protection and block protection bits.
• Package and Temperature Available in a 24-ball TFBGA (8×6 mm, 5×5 ball array) package; operating temperature range of -40°C to 85°C.
• Low-Voltage Supply Operates from 1.65 V to 2.0 V for 1.8V system compatibility.

Typical Applications

• Execute-in-Place (XIP) Systems Storage of executable code where XIP functionality is required, using the device’s XIP mode and related configuration features.
• High‑Speed Serial Flash Storage Systems requiring octal DDR/SDR SPI reads at up to 200 MHz for fast code or data access.
• Data Integrity–Focused Designs Applications that benefit from on-chip ECC, CRC modes, and DLP for improved data reliability and verification.
• Compact Embedded Designs Space-constrained boards that require a 24-TFBGA (8×6 mm) package and industrial temperature operation from -40°C to 85°C.

Unique Advantages

• Octal DDR Interface with Byte-Wide Access: Enables higher throughput compared to standard SPI modes while maintaining byte-wide data access.
• Built-In ECC and CRC: Provides on-device error correction and integrity checks to reduce system-level error handling complexity.
• Low-Voltage 1.8V Operation: Compatible with 1.65 V–2.0 V supply rails for modern low-voltage system designs.
• XIP and Recovery Mechanisms: Supports Execute-in-Place and includes defined recovery sequences and fail-safe power-up detection to aid robust system behavior after resets or power events.
• Compact BGA Package and Industrial Temperature Range: 24-TFBGA (8×6 mm) package and -40°C to 85°C operating range allow use in space-limited and wide-temperature applications.

Why Choose OCTAL FLASH, 1.8V, 512M-BIT?

The W35T51NWTBIF TR positions itself as a high-performance octal DDR flash solution for designs that require fast serial access, on-chip ECC, and XIP capability in a low-voltage footprint. Its combination of 512 Mbit SLC NAND organization, 200 MHz clock capability, and robust data-integrity features supports reliable code and data storage in compact embedded systems.

This device is suited for engineers and procurement teams looking for a 1.8V octal SPI flash with explicit interface recovery, CRC/ECC support, and a small TFBGA package, delivering measurable integration and reliability benefits for targeted system architectures.

Request a quote or submit an inquiry to discuss pricing, availability, and technical support for the W35T51NWTBIF TR.