W35T25NWTBIF

The W35T25NWTBIF is a 256‑Mbit octal Flash memory device from Winbond Electronics' SpiFlash® family. It implements SLC NAND Flash organized as 32M × 8 with an Octal SPI (OSPI) interface and Octal DDR/ODDR read modes with built‑in ECC and CRC support.

Designed for embedded code and data storage where compact, low‑voltage non‑volatile memory with high read throughput and data integrity features is required, it supports Execute‑in‑Place (XIP) and a 1.65–2.0 V supply range for low‑voltage systems.

Key Features

• Memory Core 256 Mbit SLC NAND Flash organized as 32M × 8, providing non‑volatile byte‑wide storage.
• High‑speed Interface Octal SPI (Octal I/O) with Octal DDR/ODDR read modes and support for DDR OSPI read commands to maximize read throughput.
• Clock and Read Performance Supports up to 200 MHz clock frequency and a documented access time of 4.5 ns for fast random read access.
• Data Integrity Integrated ECC operation and CRC mechanisms (including CRC‑In‑Transit and CRC‑At‑Rest modes) for enhanced data reliability.
• Execute‑in‑Place (XIP) XIP mode and configurable non‑volatile/volatile configuration registers for direct code execution from Flash.
• Power and Timing Low‑voltage operation from 1.65 V to 2.0 V with program/write word‑page time specified at 1.5 ms.
• Package and Temperature Available in a 24‑ball TFBGA package (8 × 6 mm) and specified for operation from −40 °C to 85 °C (TA).
• Interface and Control Pins Supports standard SPI signals plus control pins described in the device documentation (CS, CLK, IOx, DS, /WP, /RESET, /RSTO, /INT, /BUSY).

Typical Applications

• Embedded code storage — Store firmware and execute code in XIP mode for systems requiring direct code execution from non‑volatile memory.
• High‑performance read systems — Use the Octal DDR/ODDR interface and 200 MHz clock for applications needing sustained high read throughput.
• Data integrity‑sensitive devices — Systems that benefit from on‑device ECC and CRC for improved data reliability.
• Low‑voltage designs — 1.65–2.0 V operation makes the device suitable for compact, low‑power embedded platforms.
• Temperature‑challenged environments — Operation across −40 °C to 85 °C for a range of industrial and commercial applications.

Unique Advantages

• High‑density non‑volatile storage: 256 Mbit capacity in a 32M × 8 organization provides significant storage in a small footprint.
• Accelerated read performance: Octal SPI with DDR/ODDR read modes and up to 200 MHz clocking enable faster data throughput compared with single/double I/O modes.
• Built‑in data integrity: ECC and CRC features reduce host overhead for error detection and correction, improving system robustness.
• Low‑voltage compatibility: 1.65–2.0 V supply range supports modern low‑voltage system architectures and power‑sensitive designs.
• XIP support and configurability: Execute‑in‑Place mode plus non‑volatile and volatile configuration registers allow flexible system integration and recovery options.
• Compact package with wide operating range: 24‑ball TFBGA (8 × 6 mm) package and −40 °C to 85 °C operating range enable space‑constrained, temperature‑varied deployments.

Why Choose OCTAL FLASH, 1.8V, 256M-BIT?

The W35T25NWTBIF positions itself as a high‑density, low‑voltage octal Flash memory offering targeted at embedded systems that require fast read access, on‑device ECC/CRC, and Execute‑in‑Place capability. Its Octal DDR/ODDR interface and 200 MHz clocking provide the throughput advantages needed for read‑intensive applications while the ECC and CRC mechanisms support robust data integrity.

This device is suited for designers seeking compact, non‑volatile storage with configurable behavior via volatile and non‑volatile registers, and who require documented timing and operational characteristics (including program/write timing and operating temperature) for reliable system integration.

Request a quote or contact sales to discuss pricing, lead times, and how the W35T25NWTBIF can fit into your next design.