W9864G6IH-6

The W9864G6IH-6 is a 64 Mbit synchronous dynamic RAM (SDRAM) organized as 1M × 4 banks × 16 bits, offered in a 54‑lead TSOP (54‑TSOP II) package. It implements a parallel SDRAM interface and is designed for systems that require compact, high‑speed volatile memory with a 3.0–3.6 V supply range and commercial temperature operation.

As a -6 speed grade, this device supports clocking up to 166 MHz with CAS latency characteristics documented for synchronous burst operation and a typical access time of 5 ns, making it suitable where deterministic SDRAM timing and banked burst access are required.

Key Features

• Memory Architecture — 64 Mbit SDRAM organized as 1M × 4 banks × 16 bits (4M × 16), providing banked memory access for burst and interleaved operation.
• Speed Grade — -6 grade rated for operation up to 166 MHz with CAS latency options noted in the datasheet (CL3 referenced for -6).
• Access Performance — Specified access time of 5 ns and datasheet timing examples for burst read/write, auto‑precharge, and interleaved bank sequences.
• SDRAM Command Set — Supports standard SDRAM commands and modes documented in the datasheet, including Mode Register Set, Bank Activate, Burst Read/Write, Auto‑precharge, Self‑Refresh, Power‑down and No‑Operation.
• Power and Voltage — Operates from 3.0 V to 3.6 V supply, with electrical and timing characteristics provided in the datasheet for reliable system integration.
• Package — 54‑lead TSOP (0.400", 10.16 mm width) in 54‑TSOP II format for space‑efficient PCB mounting and assembly.
• Operating Range — Commercial temperature range of 0°C to 70°C (TA) as specified in product data.

Typical Applications

• Embedded memory expansion — Adds 64 Mbit of parallel SDRAM capacity to embedded controller and processor designs requiring banked burst access.
• Consumer electronics — Provides compact SDRAM storage for consumer products that use a 54‑TSOP II memory package and 3.0–3.6 V supply rails.
• Industrial and instrumentation — Suitable for systems operating within the specified 0°C to 70°C range that need deterministic SDRAM timing and burst modes.

Unique Advantages

• Banked 4‑bank architecture — Enables interleaved and burst access patterns documented in the datasheet to improve throughput for sequential and interleaved access sequences.
• Speed grade clarity — The -6 grade is explicitly specified to run up to 166 MHz with CAS latency references provided, allowing predictable timing selection during design.
• Comprehensive command support — Full SDRAM command set (Mode Register Set, Auto‑refresh, Self‑refresh, Power‑down, Burst control) is detailed, simplifying controller integration and power management strategies.
• Compact TSOP II package — 54‑lead TSOP (0.400", 10.16 mm) offers a small footprint for board designs that require surface‑mount SDRAM in a narrow profile.
• Documented timing and examples — Datasheet includes timing waveforms and operating timing examples (burst lengths, CAS latency, interleaved/page modes) to aid validation and bring‑up.

Why Choose W9864G6IH-6?

The W9864G6IH-6 positions itself as a compact, specification‑driven SDRAM choice for designs that need a 64 Mbit parallel DRAM with clearly defined timing, banked architecture, and a 54‑lead TSOP II package. Its -6 speed grade and documented timing examples make it suitable for systems where predictable burst performance and standard SDRAM command support are required.

This device is appropriate for engineers specifying memory with a 3.0–3.6 V supply and a 0°C to 70°C operating range, and for teams that require datasheet‑level timing diagrams and command descriptions to integrate SDRAM functionality into controllers and system validation plans.

If you would like pricing, availability or a formal quote for W9864G6IH-6, please request a quote or contact sales to discuss your requirements and lead‑time needs.