W9825G6KH-6

The W9825G6KH-6 from Winbond Electronics is a high-speed synchronous dynamic RAM (SDRAM) device organized as 4M × 4 banks × 16 bits to provide a 256 Mbit memory capacity. It implements a parallel SDRAM interface and supports standard SDRAM operation modes and command sets.

This device targets systems that require parallel SDRAM memory with defined timing and power characteristics: 166 MHz clock operation, 5 ns access time, and 3.0 V to 3.6 V supply range. The part is supplied in a 54‑TSOP II package (0.400", 10.16 mm width) and is specified for 0°C to 70°C ambient operating temperature.

Key Features

• Memory Architecture Organized as 4M × 4 banks × 16 bits (equivalent to 16M × 16 organization) delivering 256 Mbit of SDRAM capacity.
• SDRAM Core and Command Support Supports standard SDRAM functions and commands including burst read/write, auto-precharge, precharge, self-refresh, power-down, and no-operation as documented in the device operation modes.
• Performance Specified for 166 MHz clock operation (‑6 speed grade) and a 5 ns access time; compliant with the timing and operating examples provided in the datasheet for CAS latency and burst modes.
• Interface Parallel memory interface suitable for systems designed to use parallel SDRAM devices.
• Power Operating supply range of 3.0 V to 3.6 V.
• Package 54‑TSOP II (0.400", 10.16 mm width) surface-mount package for compact board-level integration.
• Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).

Typical Applications

• Board-level SDRAM memory For systems requiring 256 Mbit of parallel SDRAM in a 54‑TSOP II footprint, with defined clock and timing characteristics.
• Timing-sensitive data buffering Suited to designs that utilize SDRAM burst read/write and the device's documented CAS latency behavior to manage sequential data transfers.
• Compact PCB implementations The 54‑TSOP II package and 10.16 mm width support space-constrained board layouts.

Unique Advantages

• Defined performance envelope: 166 MHz clock and 5 ns access time provide clear, verifiable timing performance for system design and timing closure.
• Flexible SDRAM control: Built-in support for burst modes, auto-precharge, self-refresh, and power-down enables multiple memory management strategies documented in the datasheet.
• Standard parallel interface: Simplifies integration into existing parallel-SDRAM system architectures.
• 3.0–3.6 V supply compatibility: Matches common 3.3 V system power rails for straightforward power-domain integration.
• Compact surface-mount package: 54‑TSOP II reduces board area while maintaining a standard solderable footprint.

Why Choose IC DRAM 256MBIT PAR 54TSOP II?

The W9825G6KH-6 offers a straightforward, spec-driven SDRAM solution for designs that require a 256 Mbit parallel memory device with documented timing, command support, and power characteristics. Its -6 speed grade provides 166 MHz operation with CAS latency behavior and burst modes described in the manufacturer datasheet.

Designers and procurement teams looking for a compact, TSOP-packaged parallel SDRAM with clear operating conditions and mode support will find the W9825G6KH-6 suitable for board-level memory expansion where 3.0–3.6 V supply operation and 0°C to 70°C ambient range meet system requirements.

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