W9825G6KH-5

The W9825G6KH-5 from Winbond Electronics is a 256 Mbit synchronous dynamic RAM (SDRAM) device with a parallel memory interface. It is organized as 16M × 16 (also described as 4M × 4 banks × 16 bits) and is intended for use in systems requiring a 256 Mbit SDRAM memory element.

This device targets memory subsystems that require synchronous SDRAM operation at up to 200 MHz (–5 speed grade) with standard SDRAM command support and a compact 54‑TSOP II package for board-level integration.

Key Features

• Memory Architecture Organized as 16M × 16 (4M × 4 banks × 16 bits) providing a total capacity of 256 Mbit suitable for parallel SDRAM memory implementations.
• SDRAM Core and Command Set High‑speed synchronous DRAM supporting standard SDRAM commands and modes including bank activate, burst read/write, auto‑precharge, self‑refresh, power down, and clock suspend as detailed in the device documentation.
• Performance Rated for up to 200 MHz operation for the -5 speed grade with CAS latency compliant to CL3; delivers up to 200M words per second per the datasheet specifications. Typical access time is listed as 5 ns.
• Interface Parallel memory interface for integration into systems using conventional SDRAM signaling and timing.
• Power Operates from a supply range of 3.0 V to 3.6 V to match common 3 V SDRAM power rails.
• Package Supplied in a 54‑lead TSOP II package (0.400" / 10.16 mm width) for compact board footprint and standard surface‑mount assembly.
• Operating Conditions Specified ambient operating temperature range of 0 °C to 70 °C (TA) for the listed part grade.

Typical Applications

• Personal computer memory subsystems Designed to meet PC‑class SDRAM requirements for systems using parallel SDRAM configurations at the specified speed grade.
• Systems requiring parallel SDRAM Suitable for devices and modules that use a parallel SDRAM interface and require a 256 Mbit memory element with standard SDRAM control.
• Compact board‑level memory implementations The 54‑TSOP II package provides a space‑efficient option for designs with board area constraints that still require established SDRAM timing and functionality.

Unique Advantages

• Specified 200 MHz operation (–5 grade) The –5 speed grade is documented as compliant to the 200 MHz / CL3 specification, enabling higher throughput where that grade is required.
• Standard SDRAM feature set Comprehensive command support (burst read/write, auto‑precharge, self‑refresh, power down, clock suspend) simplifies integration with standard memory controllers.
• Clear electrical and timing documentation Detailed datasheet content including AC/DC characteristics and timing diagrams helps ensure predictable system design and validation.
• 3.0–3.6 V supply compatibility Compatibility with common 3 V SDRAM power rails reduces the need for special power‑rail arrangements.
• Compact TSOP II package The 54‑lead TSOP II package provides a compact, surface‑mount form factor for dense board designs.

Why Choose W9825G6KH-5?

The W9825G6KH-5 is positioned for designs that require a 256 Mbit parallel SDRAM device with documented 200 MHz (–5) performance and standard SDRAM features. Its organization and command support make it suitable for integration into systems following established SDRAM timing and control models.

With explicit electrical, timing, and functional details provided in the device documentation, the W9825G6KH-5 supports predictable integration into board designs that require a compact 54‑TSOP II package and a 3.0–3.6 V supply range within the specified 0 °C to 70 °C ambient operating window.

Request a quote or submit an inquiry to obtain pricing and availability for the W9825G6KH-5. Technical documentation is available to support design and validation efforts.