W9825G6KH-5 TR

The W9825G6KH-5 TR is a high-speed synchronous DRAM (SDRAM) device with a memory capacity of 256 Mbit, organized as 16M × 16 and implemented as 4M × 4 banks × 16 bits. It delivers a data bandwidth up to 200M words per second and conforms to the -5 speed grade supporting 200 MHz/CL3 operation.

This parallel-interface SDRAM is targeted at systems that require a 16-bit DRAM data path, offering standard SDRAM command support and a 54-TSOP II package footprint. Its electrical and timing characteristics support common SDRAM operations including burst read/write, auto-refresh, self-refresh and power-down modes.

Key Features

• Memory Architecture  Organized as 16M × 16 (4M × 4 banks × 16 bits) providing a total density of 256 Mbit for parallel memory subsystems.
• High-Speed Operation  Rated for 200 MHz clock frequency with an access time of 5 ns and a data bandwidth up to 200M words per second (‑5 speed grade / CL3).
• Standard SDRAM Command Support  Supports standard SDRAM operations and command set including bank activate, burst read/write, auto-precharge, auto-refresh, self-refresh and power-down modes (per device functional description).
• Voltage and Power  Operates from 3.0 V to 3.6 V supply, suitable for 3.3 V-based system designs.
• Package and Mounting  Supplied in a 54-TSOP II package (0.400", 10.16 mm width) for compact board-level integration.
• Operating Range  Specified for ambient operating temperature TA = 0 °C to 70 °C.

Typical Applications

• Personal Computers  Conforms to the personal computer industrial speed specifications for use in PC memory subsystems requiring 200 MHz/CL3 SDRAM operation.
• Parallel SDRAM Subsystems  Suited for system designs that require a 16-bit parallel DRAM interface and compact 54-TSOP II mounting.
• Memory Expansion Modules  Appropriate for board-level memory expansion where 256 Mbit density and standard SDRAM command support are required.

Unique Advantages

• Performance at 200 MHz: -5 speed grade supports 200 MHz operation and CL3 timing, delivering up to 200M words per second for higher-throughput memory paths.
• 256 Mbit Density in 16-bit Organization: 16M × 16 organization (4M × 4 banks × 16 bits) provides a balanced combination of capacity and parallel data width for system memory designs.
• Comprehensive SDRAM Feature Set: Implements standard SDRAM functions such as burst read/write, auto-refresh, self-refresh and power-down to support robust memory management and power control.
• Compact TSOP II Package: 54-TSOP (0.400", 10.16 mm width) package simplifies placement in space-constrained designs while maintaining a standard footprint.
• 3.0–3.6 V Supply Compatibility: Operates on common 3.3 V supply rails, easing integration into existing 3.3 V systems.

Why Choose W9825G6KH-5 TR?

The W9825G6KH-5 TR combines a 256 Mbit SDRAM density with a 16-bit parallel data path and a 4-bank internal organization to deliver high-speed, standard SDRAM functionality in a compact 54-TSOP II package. Its 200 MHz/CL3 capability and a comprehensive set of SDRAM commands make it suitable for systems that need predictable timing and throughput.

This device is appropriate for designers specifying a 3.0–3.6 V SDRAM solution with an ambient operating range of 0 °C to 70 °C and a 54-TSOP II footprint. It offers a clear specification set for engineering validation and system integration where standard SDRAM behavior and timing are required.

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