W9864G6KT-6I TR

The W9864G6KT-6I TR from Winbond Electronics is a high-speed SDRAM device delivering 64 Mbit of volatile memory in a compact 54-TFBGA (8×8) package. It implements synchronous DRAM architecture with multi-bank organization and LVTTL interface signaling for 3.0–3.6 V systems.

This device targets applications that require fast synchronous memory access with industrial temperature support (–40°C to 85°C for the -6I grade) and provides operating characteristics up to 166 MHz. The device includes standard SDRAM operational modes such as self-refresh, power-down, auto-refresh and burst read/write sequences documented in the device datasheet.

Key Features

• Memory Type & Capacity  64 Mbit SDRAM, listed in specifications as 8M × 8 memory organization.
• Internal Architecture  Datasheet describes a 1M × 4 banks × 16 bits internal architecture supporting multi-bank operation and bank-activate commands for efficient access patterns.
• Performance  Supports clock frequencies up to 166 MHz and a data bandwidth of up to 166M words per second; documented access time of 5 ns and examples including CAS latency = 3 in the datasheet.
• Interface & Voltage  LVTTL memory interface with recommended supply voltage range of 3.0 V to 3.6 V.
• Power Management & Operating Modes  Supports standard SDRAM features covered in the datasheet such as power-up and initialization sequences, self-refresh, power-down, auto-refresh, burst stop and no-operation commands.
• Package & Temperature  54-TFBGA (8×8) package case; industrial-grade temperature range of −40°C to 85°C for the -6I speed grade.
• Timing & Burst Options  Datasheet includes timing waveforms and operating examples for burst lengths (e.g., BL4, BL8) and read/write timing scenarios to support design validation.

Typical Applications

• Industrial Control Systems  Industrial-grade temperature support (−40°C to 85°C for -6I) makes the device suitable for memory in industrial embedded controllers and instrumentation.
• Embedded Synchronous Memory  Synchronous SDRAM operation with LVTTL interface and 166 MHz clock support fits embedded designs requiring predictable burst read/write behavior and documented timing.
• 3.0–3.6 V Digital Systems  Use as local DRAM for systems that operate from a 3.0–3.6 V supply and employ LVTTL signaling for data and control lines.

Unique Advantages

• Industrial Temperature Grade:  The -6I speed grade is specified for −40°C to 85°C, enabling deployment in temperature-demanding environments where that range is required.
• Compact TFBGA Packaging:  54-TFBGA (8×8) package reduces PCB footprint while delivering SDRAM functionality for space-constrained boards.
• Documented SDRAM Modes & Timing:  Comprehensive datasheet coverage of power-up, mode register programming, burst read/write, auto-precharge, self-refresh and detailed timing waveforms simplifies integration and validation.
• Flexible Burst and CAS Options:  Datasheet examples show support for burst lengths and CAS latency (examples include CL=3 and BL=4/8), aiding optimization for throughput and latency trade-offs.
• Standard LVTTL Interface:  LVTTL signaling and 3.0–3.6 V supply compatibility allow straightforward interfacing with TTL-compatible memory controllers and logic.

Why Choose W9864G6KT-6I TR?

The W9864G6KT-6I TR provides a well-documented SDRAM option combining a 64 Mbit memory footprint, LVTTL interface, and industrial temperature capability in a compact 54-TFBGA package. Its datasheet includes extensive operational and timing examples (burst reads/writes, CAS latency scenarios, power-down and self-refresh modes) to support reliable system integration and verification.

This device is suited for engineers designing synchronous memory subsystems in embedded and industrial applications that require validated timing, multi-bank operation, and a 3.0–3.6 V LVTTL interface. The documented operating modes and timing make it a practical choice for designs where predictable SDRAM behavior and industrial temperature range are important.

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