W9864G6KH-6I TR

The W9864G6KH-6I TR from Winbond Electronics is a high-speed synchronous DRAM (SDRAM) device organized as 1M × 4 banks × 16 bits for a total density of 64 Mbit. This -6I industrial-grade speed grade supports operation up to 166 MHz with CAS latency = 3 and is specified for extended temperature operation.

Designed for burst-oriented parallel memory systems, the device delivers high-bandwidth transfers with a 4-bank architecture, a 16-bit data path, and support for standard SDRAM command sequences. It is supplied in a 54‑TSOP II package suitable for board-level integration with a 3.0–3.6 V supply range.

Key Features

• SDRAM Core Architecture — Organized as 1M × 4 banks × 16 bits (equivalently listed as 4M × 16), enabling banked, burst-oriented memory accesses.
• Density — 64 Mbit total memory capacity for compact board-level memory needs.
• Performance — -6I speed grade rated for up to 166 MHz operation with CAS latency = 3; datasheet indicates device supports burst-oriented transfers and delivers high data bandwidth.
• Timing — Typical access time listed as 5 ns and multiple timing diagrams and command sequences are provided for read/write, burst, auto-precharge, self-refresh and power-down modes.
• Voltage and Power — Operates from 3.0 V to 3.6 V supply range.
• Industrial Temperature Range — -40 °C to 85 °C ambient for the -6I industrial grade.
• Package — 54‑TSOP (0.400", 10.16 mm width) / 54‑TSOP II supplier device package for space-constrained PCB layouts.
• Parallel Interface — Standard parallel SDRAM interface supporting common command sets and burst modes for integration into parallel memory subsystems.

Typical Applications

• Industrial Systems — Use where extended temperature (-40 °C to 85 °C) operation and industrial-grade memory are required.
• Parallel SDRAM Memory Subsystems — Board-level memory for designs requiring a 64 Mbit parallel SDRAM with 16-bit data bus and burst access capability.
• Space-Constrained PCB Designs — Compact 54‑TSOP II package for applications needing a small-footprint DRAM solution with standard operating voltage.

Unique Advantages

• Industrial Temperature Capability: -40 °C to 85 °C rating on the -6I grade supports deployment in temperature-challenging environments.
• Banked SDRAM Architecture: 1M × 4 banks × 16-bit organization enables efficient multi-bank operation and burst transfers for higher effective throughput.
• High-Frequency Operation: -6I grade operation up to 166 MHz with CAS latency = 3 provides predictable timing for designs targeting this speed class.
• Compact TSOP Package: 54‑TSOP II footprint (0.400", 10.16 mm width) simplifies placement in dense PCB layouts.
• Standard Parallel Interface: Compatible with common SDRAM command sets (read/write/burst/precharge/self-refresh/power-down) for straightforward system integration.
• Wide Supply Margin: 3.0–3.6 V supply range accommodates typical 3.3 V system rails and minor variations.

Why Choose W9864G6KH-6I TR?

The W9864G6KH-6I TR is a purpose-built 64 Mbit SDRAM device that combines a banked 4-bank × 16-bit architecture with industrial-grade temperature capability and a compact 54‑TSOP II package. Its -6I speed grade supports up to 166 MHz operation with CAS latency = 3 and is described in the datasheet with comprehensive timing, command, and mode-register details for reliable burst-oriented operation.

This device is suited to designs that require a board-level parallel SDRAM solution with predictable timing, moderate density, and extended temperature support. Designers benefit from a clear specification set covering electrical characteristics, timing waveforms, and operational sequences necessary for integration into robust embedded and industrial memory subsystems.

Request a quote or submit an inquiry to obtain pricing, lead times, and availability for the W9864G6KH-6I TR. Winbond Electronics datasheet and technical documentation are available for detailed integration guidance.