W9864G6KT-6 TR

The W9864G6KT-6 TR from Winbond Electronics is a 64 Mbit synchronous DRAM (SDRAM) device organized as 1M × 4 banks × 16 bits. It implements a LVTTL memory interface and is offered in a 54‑TFBGA (8×8) package for surface-mount integration.

Designed for systems that require synchronous, high‑speed DRAM storage, this device delivers operation up to 166 MHz (–6 speed grade) with a typical access time of 5 ns, supporting burst and banked memory operations for efficient data throughput.

Key Features

• Core / Memory Organization 64 Mbit SDRAM organized as 1M × 4 banks × 16 bits for banked, parallel access.
• Performance Supports up to 166 MHz clocking (–6 grade) and a data bandwidth up to 166M words per second; typical access time specified as 5 ns.
• Interface LVTTL-compatible memory interface for synchronous read/write operations and control signaling.
• Power Supply voltage range: 3.0 V to 3.6 V.
• Advanced SDRAM Functions Supports burst read/write, auto-precharge, self-refresh, power-down modes, and programmable mode register settings (including CAS latency options described in the datasheet).
• Package 54‑TFBGA (8×8) surface-mount package for compact board-level footprint.
• Operating Range Commercial temperature range: 0 °C to 70 °C (TC).

Typical Applications

• Embedded memory subsystems — Provides 64 Mbit of synchronous DRAM for designs requiring banked, burst-access memory with LVTTL signaling.
• High-speed buffering — Suitable where up to 166 MHz clocking and burst transfers are needed for intermediate data staging.
• Compact board-level designs — 54‑TFBGA package allows integration into space-constrained assemblies that require surface-mount SDRAM.

Unique Advantages

• Banked SDRAM architecture — 4-bank organization enables interleaved operations and improved effective throughput for burst sequences.
• Synchronous operation up to 166 MHz — Enables predictable timing and high data-rate transfers when operating at the –6 speed grade.
• Flexible power modes — Built-in self-refresh and power-down modes reduce system-level power during idle periods per datasheet-defined commands.
• Standard LVTTL interface — Simplifies signal-level compatibility with LVTTL-based memory controllers and designs.
• Compact BGA package — 54‑TFBGA (8×8) minimizes PCB area for dense system designs.

Why Choose IC DRAM 64MBIT LVTTL 54TFBGA?

The W9864G6KT-6 TR is positioned as a high-speed SDRAM component offering 64 Mbit capacity with a banked 1M × 4 × 16 architecture and LVTTL interface for synchronous memory designs. Its support for up to 166 MHz operation (–6 grade), burst transfers, and standard SDRAM control features (auto-precharge, self-refresh, power-down) make it suitable for systems that require deterministic timing and efficient block transfers.

This device is appropriate for designers seeking a compact, surface-mount SDRAM solution with clear electrical and timing characteristics (3.0–3.6 V supply, 0 °C to 70 °C operating range) and documented SDRAM command and timing behavior in the manufacturer datasheet.

For pricing, availability, or to request a quote for W9864G6KT-6 TR, please submit your request to sales specifying part number and required quantities.