W9864G6KH-6 TR

The W9864G6KH-6 TR is a high-speed synchronous DRAM (SDRAM) device providing 64 Mbit of volatile memory in a 4M × 16 organization. It implements a parallel memory interface in a 54-TSOP II package and is offered in the -6 speed grade rated for operation up to 166 MHz/CL3.

Key technical characteristics include a 3.0 V to 3.6 V supply range, a 0°C to 70°C ambient operating range, and a 5 ns access time, making the device suitable for applications that require parallel SDRAM storage with defined timing and voltage requirements.

Key Features

• Memory Architecture 64 Mbit SDRAM organized as 1M × 4 banks × 16 bits (reported as 4M × 16), supporting burst-oriented access and banked operation as described in the device documentation.
• Speed Grade & Clock -6 speed grade rated to run up to 166 MHz with CAS latency settings described in the datasheet (e.g., CL3).
• Timing Fast access characteristics with a specified access time of 5 ns and detailed AC timing and command sequences available in the device documentation.
• Voltage & Power Operates from a 3.0 V to 3.6 V supply range consistent with standard SDRAM voltage levels.
• Interface Parallel SDRAM interface with standard SDRAM command set support (read, write, auto-precharge, refresh, self-refresh, power-down, and others described in the datasheet).
• Package 54-TSOP II package (0.400" / 10.16 mm width) suitable for surface-mount assembly.
• Operating Temperature Specified ambient range of 0°C to 70°C (TA) for the -6 grade part.
• Documentation Detailed functional description, command timing, and package specifications are provided in the device datasheet, including timing examples for burst reads/writes, refresh and power modes.

Typical Applications

• Parallel memory subsystems Use where a 64 Mbit parallel SDRAM (4M × 16) is required with defined timing and banked burst operation.
• Board-level DRAM replacement or upgrades Drop-in candidate for designs specifying a 54-TSOP II packaged SDRAM device with 3.0–3.6 V supply requirements.
• Systems requiring defined thermal and voltage envelopes Suitable for designs operating within 0°C to 70°C and 3.0 V–3.6 V supply constraints.

Unique Advantages

• Banked memory organization: 1M × 4 banks × 16 bits arrangement enables burst-oriented accesses and interleaved bank operations as documented, improving sustained transfer patterns where supported by system logic.
• Defined speed grade: The -6 grade supports operation up to 166 MHz/CL3, providing a clear performance target for timing-sensitive designs.
• Comprehensive timing documentation: The datasheet includes extensive timing waveforms, command sequences, and operating timing examples (burst lengths, CAS latency, auto-precharge, refresh cycles) to aid system integration and validation.
• Standard supply range: Operates on a 3.0 V to 3.6 V supply, aligning with common SDRAM power rails for straightforward power design.
• Compact surface-mount package: 54-TSOP II package profile supports space-constrained PCB layouts while retaining parallel SDRAM connectivity.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The W9864G6KH-6 TR combines a clear, banked SDRAM architecture (1M × 4 banks × 16 bits) with a defined -6 speed grade (up to 166 MHz) and documented timing examples to simplify integration into systems that require parallel SDRAM memory. Its 54-TSOP II package and 3.0–3.6 V supply make it compatible with common board-level memory implementations.

This device is appropriate for designers and procurement teams needing a documented, mid-capacity SDRAM with explicit electrical and timing specifications, enabling predictable system behavior and aiding validation against timing and thermal constraints.

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