W9864G6KH-5

The W9864G6KH-5 is a 64 Mbit high-speed synchronous dynamic random access memory (SDRAM) in a parallel interface format. It is organized as 1M × 4 banks × 16 bits (4M × 16) and is designed for systems that require burst-oriented parallel DRAM with predictable timing and command-level control.

As a -5 speed grade, this device supports operation up to 200 MHz with CAS latency 3 and delivers a data bandwidth of up to 200M words per second. The device operates from a 3.0 V to 3.6 V supply and is supplied in a 54-TSOP II package (0.400", 10.16 mm width).

Key Features

• SDRAM architecture — Organized as 1M × 4 banks × 16 bits (4M × 16), providing 64 Mbit of volatile DRAM storage with burst-oriented access.
• Performance — -5 speed grade supports up to 200 MHz clock frequency and CAS Latency = 3, with access time listed as 5 ns.
• Command support — Implements standard SDRAM command set including bank activate, burst read/write, auto-precharge, precharge, auto-refresh, self-refresh, power-down and no-operation, enabling full SDRAM control and power modes.
• Interface — Parallel memory interface suited for parallel SDRAM controllers and systems requiring word-oriented access.
• Power — Operates from 3.0 V to 3.6 V supply range.
• Package — 54-TSOP II (0.400", 10.16 mm width) surface-mount package for board-level integration.
• Operating range — Specified commercial ambient temperature range of 0°C to 70°C (TA).

Typical Applications

• High-speed memory subsystems — Use where a 64 Mbit parallel SDRAM device with burst access and up to 200 MHz operation is required.
• Parallel bus memory expansion — Integration into systems using parallel SDRAM interfaces that require a 16-bit data width and standard SDRAM commands.
• Compact board designs — Applications that benefit from the 54-TSOP II package footprint and standard 3.0 V–3.6 V supply.

Unique Advantages

• Verified SDRAM feature set: Full support for bank activation, burst read/write, auto-precharge, refresh and self-refresh modes provides predictable control for memory-intensive operations.
• 200 MHz operation at -5 grade: Enables higher throughput at CAS Latency 3 for systems requiring increased word-rate performance.
• Compact TSOP package: 54-TSOP II package (0.400", 10.16 mm) simplifies board layout for space-constrained designs.
• Standard 3.0–3.6 V supply: Matches common 3.3 V system power rails for straightforward power integration.
• Defined commercial operating range: Specified operation from 0°C to 70°C (TA) for general-purpose commercial electronics.

Why Choose W9864G6KH-5?

The W9864G6KH-5 positions itself as a practical 64 Mbit parallel SDRAM option for designs that need standard SDRAM control, burst-oriented access and up to 200 MHz operation in a compact 54-TSOP II package. Its documented command set and timing characteristics (including CAS latency and burst modes) make it suitable for systems where deterministic SDRAM behavior and integration with parallel memory controllers are required.

This device is appropriate for designers and procurement teams seeking a vendor-specified SDRAM component with clear electrical and timing specifications, a 3.0–3.6 V supply window, and a defined commercial temperature range for conventional electronics applications.

Request a quote or submit a pricing and availability inquiry to evaluate W9864G6KH-5 for your next design.