W9864G6KH-6

The W9864G6KH-6 from Winbond Electronics is a 64 Mbit synchronous DRAM (SDRAM) device organized as 1M × 4 banks × 16 bits (4M × 16). It is a high-speed, burst-oriented parallel SDRAM designed for systems that require a parallel memory interface in a compact 54‑TSOP II package.

Key value propositions include support for up to 166 MHz clocking with CAS‑latency 3, a 3.0–3.6 V supply range, and on-die features such as burst read/write, self-refresh and power-down modes for common memory management operations.

Key Features

• Core / Architecture: SDRAM organized as 1M × 4 banks × 16 bits (4M × 16) delivering 64 Mbit total memory.
• Performance: Rated for operation at up to 166 MHz for the -6 grade with CAS‑latency 3; datasheet cites data bandwidth capability up to 200M words per second for applicable speed grades.
• Access Timing: Typical access time listed as 5 ns for the specified device.
• Interface: Parallel SDRAM interface with burst-oriented access supporting burst read, burst write and burst stop commands.
• Power: Supply voltage 3.0 V to 3.6 V; includes power management commands such as self-refresh and power-down modes.
• Package & Mounting: 54‑TSOP II package (0.400", 10.16 mm width) suitable for surface-mount assembly.
• Operating Environment: Commercial operating temperature range 0°C to 70°C (TA).
• Command & Control Features: Supports mode register programming, auto-precharge, precharge, auto-refresh and advanced banked access sequences as documented in the device functional description.

Typical Applications

• System Memory for Embedded Designs: Provides 64 Mbit parallel SDRAM for designs that require a compact TSOP II footprint and a 3.0–3.6 V supply.
• Buffering and Frame Storage: Burst-oriented access and banked organization make it suitable where short burst transfers and predictable latency are required.
• Legacy Parallel SDRAM Interfaces: Fits systems requiring a parallel SDRAM interface in a 54‑TSOP II package.

Unique Advantages

• Compact TSOP II Package: 54‑pin TSOP (0.400", 10.16 mm width) minimizes board footprint while providing a full parallel SDRAM pinout.
• Validated SDRAM Command Set: On-device support for mode register set, auto-refresh, self-refresh, auto-precharge and power-down simplifies memory control implementation.
• High-Speed Operating Grade: The -6 grade supports operation at up to 166 MHz with CAS‑latency 3, enabling higher throughput in compatible designs.
• Flexible Supply Range: Operates from 3.0 V to 3.6 V, matching common system voltage rails for straightforward integration.
• Banked Memory Organization: 4 banks × 1M words × 16 bits enables efficient interleaved accesses and burst transfers for sustained data flow.

Why Choose W9864G6KH-6?

The W9864G6KH-6 combines a compact 54‑TSOP II package with a banked, burst-oriented SDRAM architecture and support for 166 MHz/CL3 operation to serve designs needing 64 Mbit of parallel SDRAM. Its documented command set including self-refresh, auto-precharge and power-down modes supports common memory management strategies while the 3.0–3.6 V supply range and commercial temperature rating simplify integration into many electronic systems.

This device is appropriate for engineers specifying a proven Winbond SDRAM component where a 64 Mbit parallel memory in a small package and defined timing/command behaviors are required.

Request a quote or submit an inquiry to obtain pricing and availability for the Winbond W9864G6KH-6 and to evaluate this SDRAM for your design requirements.