W9864G6KH-5 TR

The W9864G6KH-5 TR is a 64 Mbit volatile synchronous DRAM (SDRAM) organized as 1M × 4 banks × 16 bits with a parallel memory interface. It is a burst-oriented SDRAM device designed to deliver synchronous memory bandwidth up to the -5 speed grade specification.

Targeted at designs requiring parallel SDRAM storage, this device provides 64 Mbit capacity, support for burst read/write operations, and a 54-TSOP II package targeted for board-level integration where a compact TSOP footprint is required.

Key Features

• Memory Architecture  Organized as 1M × 4 banks × 16 bits (4M × 16 logical organization) providing 64 Mbit total capacity for parallel SDRAM applications.
• High-Speed Operation  -5 speed grade supports operation up to 200 MHz/CL3 and the device family is specified for burst-oriented accesses and mode-register programmable operation.
• Access Performance  Access time specified at 5 ns for fast synchronous read/write cycles and support for burst lengths and CAS latency options as defined in the device functional description.
• Power and Voltage  Standard supply range of 3.0 V to 3.6 V suitable for 3.3 V system rails; supports power-down and self-refresh modes for reduced power during idle periods (per functional description).
• Memory Commands & Modes  Supports bank activate, burst read/write, auto-precharge, precharge, self-refresh, power-down, and mode register programming for flexible memory control and timing.
• Package & Mounting  Available in a 54-TSOP II package (0.400" / 10.16 mm width) for surface-mount placement in space-constrained board designs.
• Operating Environment  Rated for ambient operating temperature from 0°C to 70°C (TA) for standard commercial deployments.

Typical Applications

• Embedded system memory  Used as parallel SDRAM for embedded platforms and board-level memory expansion where 64 Mbit volatile storage is required.
• Consumer and electronics designs  Provides synchronous burst memory for designs requiring standard 3.3 V supply and compact TSOP footprint.
• Legacy parallel-memory designs  Suitable for systems and development platforms that use parallel SDRAM interfaces and burst-oriented access patterns.

Unique Advantages

• Verified SDRAM architecture:  1M × 4 banks × 16 bits organization delivers straightforward mapping for parallel memory systems and predictable burst behavior.
• High-frequency capability:  -5 grade operation up to 200 MHz/CL3 enables higher throughput for burst transfers compared to lower frequency grades within the same family.
• Flexible power modes:  Built-in self-refresh and power-down commands reduce standby power and simplify low-power management in system designs.
• Compact surface-mount package:  54-TSOP II package (10.16 mm width) eases board layout in constrained spaces while maintaining traditional parallel SDRAM pinout.
• Standard supply compatibility:  3.0 V to 3.6 V supply range matches common 3.3 V systems for straightforward integration.

Why Choose W9864G6KH-5 TR?

The W9864G6KH-5 TR positions itself as a practical choice when a compact, parallel 64 Mbit SDRAM is required. With a 1M × 4 banks × 16-bit organization, support for burst-oriented access, and -5 grade operation up to 200 MHz/CL3, it delivers synchronous, low-latency memory suitable for designs that require predictable SDRAM timing and standard 3.3 V supply compatibility.

This device is appropriate for engineers specifying board-level SDRAM in a 54-TSOP II package and looking for standard SDRAM functionality including auto-precharge, self-refresh, power-down modes, and programmable mode registers for timing and burst configuration.

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