 | | IN87C51-1 | Advanced Micro Devices | 8-BIT, OTPROM, 8051 CPU | Microcontrollers | 44-PLCC (16.59x16.59) | 4.5V - 5.5V | -40°C – 85°C | Program Memory Size: 4KB (4K x 8) Mounting Type: Surface Mount | 1,475 | |
 | | IP80C88 | Renesas | IC MPU 5MHZ 40DIP | Microprocessors | 40-PDIP | N/A | -40°C ~ 85°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 40-DIP (0.600″, 15.24mm) Supplier Device Package: 40-PDIP | 352 | |
 | | IP80C88-2 | Renesas | IC MPU 8MHZ 40DIP | Microprocessors | 40-PDIP | N/A | -40°C ~ 85°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 40-DIP (0.600″, 15.24mm) Supplier Device Package: 40-PDIP | 553 | |
 | N/A | IS21EF04GP-BCLI | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, BOOT P | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 1,950 | |
 | N/A | IS21EF04GP-BCLI-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, BOOT P | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 757 | |
 | N/A | IS21EF04GP-JCLI | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 109 | |
 | N/A | IS21EF04GP-JCLI-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 1,099 | |
 | N/A | IS21EF04GP-JQLI | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 829 | |
 | N/A | IS21EF04GP-JQLI-TR | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 87 | |
 | N/A | IS21EF08G-BCLI | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 978 | |
 | N/A | IS21EF08G-BCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 205 | |
 | N/A | IS21EF08G-JCLI | Integrated Silicon Solution Inc | IC FLASH 64MBIT EMMC 153FBGA | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 250 | |
 | N/A | IS21EF08G-JCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 875 | |
 | N/A | IS21EF08G-JQLI | Integrated Silicon Solution Inc | IC FLASH 64MBIT EMMC 100FBGA | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,318 | |
 | N/A | IS21EF08G-JQLI-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 549 | |
 | N/A | IS21EF08GP-BCLI | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,469 | |
 | N/A | IS21EF08GP-BCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 535 | |
 | N/A | IS21EF08GP-JCLI | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,250 | |
 | N/A | IS21EF08GP-JCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 491 | |
 | N/A | IS21EF08GP-JQLI | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 52 | |