 | | IM6416SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 4MX16, 166MHZ | Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 95°C (TC) | Memory Organization: 4M x 16 Write Cycle Time Word Page: 2 ns | 1,003 | |
 | | IM6416SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 4MX16, 166MHZ | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 95°C (TC) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 561 | |
 | | IM6432SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 2MX32, 166MHZ | Memory | 90-FBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: 2 ns | 360 | |
 | | IM6432SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 2MX32, 166MHZ | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,130 | |
 | | IMC1B1A3C3A9A5E3A3A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 4GB, -25 | Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 296 | |
 | | IMC1B1A3C3A9A5I3A3A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 4GB, -40 | Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 600 | |
 | | IMC1B1A4C3A9A5E3A4A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 8GB, -25 | Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,212 | |
 | | IMC1B1A4C3A9A5I3A4A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 8GB, -40 | Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 508 | |
 | N/A | IMC1B1A6C1A0A1I3A6A0000 | Intelligent Memory Ltd. | EMMC,5.1,153 BALL,32GB,-40C TO 8 | Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,204 | |
 | N/A | IMC1B1A8C1A0A1I3A8A0000 | Intelligent Memory Ltd. | EMMC,5.1,153 BALL,64GB,-40C TO 8 | Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 886 | |
 | | IMC1B1A8C2A2A1E3A6A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 32GB, -2 | Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 708 | |
 | | IMC1B1A8C2A2A1E3A8A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 64GB, -2 | Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 673 | |
 | | IME2532SDBETG-6I | Intelligent Memory Ltd. | ECC SDRAM, 256MB, 3.3V, 8MX32, 1 | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 100 | |
 | | IME5108SDBETG-75 | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 64MX8, 1 | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 126 | |
 | | IME5108SDBETG-75I | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 64MX8, 1 | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 578 | |
 | | IME5116SDBETG-75 | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 32MX16, | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 156 | |
 | | IME5116SDBETG-75I | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 32MX16, | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 47 | |
 | | IME5132SDBETG-6I | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 16MX32, | Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,265 | |
 | | IN80C186-20 | Advanced Micro Devices | IC MPU I186 20MHZ | Microprocessors | N/A | N/A | 0°C ~ 70°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: 0°C ~ 70°C (TA) | 477 | |
 | | IN80C188-16/TR | Advanced Micro Devices | IC MPU I186 16MHZ | Microprocessors | N/A | N/A | 0°C ~ 70°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: 0°C ~ 70°C (TA) | 731 | |