IME5132SDBETG-6I

The IME5132SDBETG-6I is a 512 Mbit synchronous DRAM with integrated ECC error correction, organized as 16M × 32 (4 banks × 4Mbit × 32). It delivers full synchronous DRAM operation with programmable CAS latency and high-speed data transfer rates up to 166 MHz.

This device is suited for systems that require error detection and correction combined with high-speed SDRAM operation and support for extended operating temperatures. It offers flexible burst and refresh modes, a LVTTL interface, and is available in an 86-pin TSOP II package for board-level mounting.

Key Features

• Core / Memory Organization 16M × 32 organization (4 banks × 4Mbit × 32) providing a total memory size of 512 Mbit.
• Integrated ECC On-chip error correction capability for improved data integrity.
• Performance Supports system frequencies up to 166 MHz (CL=3) with a clock access time of 5.4 ns and an AC access time specification for low-latency operation.
• Programmable Timing & Burst Programmable CAS latency (2 or 3), programmable wrap sequence (sequential or interleave), and burst lengths of 1, 2, 4, 8 and full page (sequential) or 1, 2, 4, 8 (interleave).
• Refresh & Power Management Auto refresh, self refresh, power-down mode and a refresh interval of 4096 cycles/64 ms as specified for supported temperature ranges.
• Interface & Supply LVTTL interface with single supply voltage range of 3.0 V to 3.6 V (nominal 3.3 V ±0.3 V).
• Package & Mounting Available in an 86-pin TSOP II package (86-TFSOP, 0.400" / 10.16 mm width) for PCB mounting.
• Operating Temperature Specified operating ambient temperature range of −40°C to +85°C (TA) for industrial-grade devices.

Typical Applications

• Systems requiring data integrity: Memory subsystems where integrated ECC provides on-chip error detection and correction to improve data reliability.
• Industrial equipment: Designs operating across an extended ambient range (−40°C to +85°C) that require robust SDRAM performance.
• Board-level memory expansion: PCB-mounted memory for systems needing 512 Mbit SDRAM in an 86-pin TSOP II package with LVTTL interface.

Unique Advantages

• Integrated ECC for improved data integrity: Built-in error correction reduces the need for external ECC logic and simplifies system-level error management.
• High-speed synchronous operation: Up to 166 MHz system frequency with programmable CAS latency enables higher data throughput where required.
• Flexible burst and timing options: Programmable burst lengths, wrap modes and CAS latencies allow tuning for different access patterns and system requirements.
• Industrial temperature support: Specified for −40°C to +85°C ambient operation, enabling use in temperature-challenging environments.
• Standard LVTTL interface and TSOP II package: Common signalling and a compact 86-pin TSOP II footprint support straightforward PCB integration.
• Comprehensive refresh and power modes: Auto/self refresh and power-down modes support sustained operation and reduced power when idle.

Why Choose ECC SDRAM, 512MB, 3.3V, 16MX32

The IME5132SDBETG-6I combines integrated ECC with a synchronous SDRAM architecture to deliver a reliable 512 Mbit memory option that balances performance and data integrity. With programmable CAS latency and burst modes, LVTTL signalling, and support for industrial ambient temperatures, it is positioned for designs that need robust board-level SDRAM with on-chip error correction.

This part is appropriate for engineering teams and procurement focused on systems that require verified timing options, ECC support, and a compact TSOP II package—providing a scalable memory element for long-term deployments where maintainable data integrity and predictable timing behavior matter.

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