IME5116SDBETG-75I

The IME5116SDBETG-75I is an ECC SDRAM device that integrates error correction into a synchronous DRAM architecture. It is organized as 32M × 16 and specified as a 512Mbit memory with synchronous, burst-capable operation and programmable CAS latency.

Designed for systems that need synchronous DRAM with on-die ECC, this device delivers selectable CAS latency, burst control and standard SDRAM features while supporting industrial temperature operation and a 3.3 V-class supply.

Key Features

• Memory Core  Organized as 32M × 16 (512 Mbit) with four banks for interleaved access and higher effective random access rates.
• Integrated ECC  512Mbit SDRAM with integrated error correction as stated in the device family description.
• Performance  System frequency up to 166 MHz available in faster speed grades; the -75 speed grade is specified for 133 MHz (CAS latency = 3). Clock access time specified at 5.4 ns for CL=3.
• Programmability  Programmable CAS latency (2, 3), programmable wrap sequence (sequential or interleave) and programmable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave).
• Standard SDRAM Commands  Supports Single Pulsed RAS interface, data mask for read/write control, automatic and controlled precharge, auto refresh and self-refresh modes, and power-down mode.
• Timing  Write cycle time (word/page) 15 ns; clock cycle time 7.5 ns for the -75 grade at CL=3 and 10 ns at CL=2 as documented in the datasheet table.
• Interface & Power  LVTTL interface with single 3.3 V ±0.3 V power supply range (3.0 V to 3.6 V specified).
• Package  Available in 54-pin TSOP II (0.400", 10.16 mm width) for standard surface-mount assembly.
• Temperature & Reliability  Industrial operating temperature range of −40°C to +85°C (Ta) with refresh interval and modes documented for industrial grade operation.

Typical Applications

• Industrial Control  Industrial temperature rating (−40°C to +85°C Ta) and standard SDRAM features make the device suitable for embedded industrial systems requiring synchronous memory.
• Data-Integrity Systems  Integrated ECC supports applications where error detection and correction are required to maintain data integrity in volatile memory.
• Embedded Memory Subsystems  LVTTL interface, 3.3 V supply and standard SDRAM command set fit embedded designs using synchronous DRAM with programmable latency and burst control.

Unique Advantages

• On-Die ECC:  Built-in error correction simplifies system-level data integrity without adding external ECC logic.
• Selectable Performance Modes:  Programmable CAS latency and burst options allow tuning for latency or throughput based on system needs.
• Industrial Temperature Range:  Specified operation from −40°C to +85°C (Ta) supports deployment in harsher environment applications.
• Standard Interface and Supply:  LVTTL signalling and a 3.3 V nominal supply (3.0 V–3.6 V range) ease integration into existing 3.3 V SDRAM subsystems.
• Compact TSOP II Package:  54-pin TSOP II packaging provides a space-efficient surface-mount footprint for board-level designs.

Why Choose IME5116SDBETG-75I?

The IME5116SDBETG-75I positions itself as a synchronous DRAM solution with integrated ECC and flexible timing options for systems that require on-die error correction, programmable latency and standard SDRAM command support. Its 32M × 16 organization and 54-pin TSOP II packaging provide a compact, industry-familiar form factor.

This device is well suited to designers building industrial and embedded systems that need synchronous memory with data-integrity features, selectable performance modes and established SDRAM functionality. The combination of ECC, industrial temperature rating and LVTTL interface supports reliable system-level memory integration and long-term deployment in temperature-demanding environments.

If you would like pricing, availability or a formal quote for the IME5116SDBETG-75I, please submit a request for a quote or an inquiry to receive further assistance and ordering information.