IME5108SDBETG-75

The IME5108SDBETG-75 is a 512 Mbit synchronous DRAM device with integrated ECC error correction, organized as 64M × 8 and supplied in a 54-pin TSOP II package. It implements a full synchronous DRAM architecture with four internal banks and programmable CAS latency, targeting systems that require ECC-protected, high-speed synchronous memory in a compact footprint.

This device operates from a single 3.3 V ±0.3 V supply, supports a 133 MHz system clock for the -75 speed grade, and is specified for commercial operating temperatures (0°C to +70°C Ta).

Key Features

• Integrated ECC Error Correction  512 Mbit memory with on-chip ECC to detect and correct memory errors, improving data integrity for supported systems.
• SDRAM Architecture  Full synchronous DRAM with all signals referenced to the clock rising edge; four internal banks (BA0 & BA1) enable interleaved operation and higher random access rates.
• Memory Organization & Capacity  Organized as 64M × 8 yielding 512 Mbit of DRAM capacity suitable for ECC-protected memory arrays.
• Performance & Timing  -75 speed grade supports a 133 MHz system frequency with CAS latency up to 3; clock access time tAC3 = 5.4 ns and write cycle time (word page) = 15 ns.
• Programmable Burst and CAS Options  Programmable CAS latency (2, 3), selectable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave), and wrap sequencing for flexible data transfer patterns.
• Refresh and Power Management  Supports auto refresh, self refresh and power-down modes; refresh interval of 4096 cycles/64 ms for commercial temperature range.
• Interface & Voltage  LVTTL interface logic levels; single 3.3 V ±0.3 V power supply (3.0 V to 3.6 V specification range).
• Package  54-pin TSOP II (0.400", 10.16 mm width) package for compact board-level implementation.
• Operating Temperature  Commercial grade specified for Ta = 0°C to +70°C.

Typical Applications

• ECC-protected memory subsystems  Use where on-chip error correction is required to maintain data integrity within memory arrays.
• Commercial embedded systems  Memory for systems operating in the commercial temperature range (0°C to +70°C Ta) that require synchronous DRAM with ECC.
• Compact TSOP54 form-factor designs  Drop-in memory for designs constrained to a 54-pin TSOP II footprint with LVTTL signaling.

Unique Advantages

• On-chip ECC for improved data integrity: Integrated error correction enables detection and correction of memory errors without external ECC logic.
• Flexible timing and burst control: Programmable CAS latency and multiple burst-length options let designers balance latency and throughput per application needs.
• Compact package: 54-pin TSOP II package delivers a high-density memory solution for space-constrained PCBs.
• Single 3.3 V supply: Standard 3.3 V ±0.3 V operation simplifies power supply design and integration with common system voltages.
• Power and refresh management: Support for power-down, auto refresh and self refresh helps manage power and retention in varying operating modes.

Why Choose IME5108SDBETG-75?

The IME5108SDBETG-75 provides a balanced combination of ECC-protected memory, synchronous DRAM performance, and compact packaging from Intelligent Memory Ltd. Its 512 Mbit capacity, 64M×8 organization and on-chip ECC make it suitable for systems that must maintain data integrity while operating in a commercial temperature range.

With programmable timing, flexible burst modes, and a standard LVTTL interface in a 54-pin TSOP II footprint, this device is suited to designs that require reliable, ECC-enabled SDRAM in a compact form factor while operating from a single 3.3 V supply.

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