IME2532SDBETG-6I

The IME2532SDBETG-6I is an ECC SDRAM device offering 256 Mbit of volatile DRAM organized as 8M × 32. It is a full synchronous DRAM designed for clock-referenced operation and implements multi-bank architecture with programmable latency and burst controls.

Designed for applications that require high-speed synchronous memory with error-correcting capability and industrial temperature support, this device provides up to 166 MHz operation and a 3.0–3.6 V supply range for system-level integration.

Key Features

• Memory Architecture 256 Mbit DRAM organized as 8M × 32 with multi-bank operation to support interleaved access patterns and higher random-access rates.
• Performance Clock frequency up to 166 MHz and clock access time as low as 5.4 ns; programmable CAS latency of 2 or 3 enables tuning for system timing.
• Timing and Burst Control Programmable burst lengths (1, 2, 4, 8 and full-page for sequential; 1,2,4,8 for interleave) and support for multiple burst read with single write to optimize throughput.
• Reliability and Refresh Auto refresh, self-refresh and a refresh interval of 8192 cycles/64 ms help maintain data integrity in volatile memory operation.
• Power and Interface Single 3.3 V ±0.3 V supply (operating 3.0–3.6 V) with LVTTL I/O interface and support for power-down mode to manage power when idle.
• Package and Temperature Available in 86-TFSOP / 86-TSOP II package (0.400", 10.16 mm width) and rated for industrial ambient operation from −40°C to 85°C (TA).
• Control and Signal Support Full synchronous operation referenced to the rising clock edge, single-pulsed RAS interface, data mask for read/write control, and bank select signals (BA0 & BA1).

Typical Applications

• Industrial Control Industrial systems that require operation across −40°C to 85°C benefit from the device’s industrial temperature rating and synchronous DRAM architecture for deterministic memory access.
• Networking and Telecom Buffers High-speed buffering and packet processing implementations can use the 166 MHz clock capability and programmable burst modes for sustained throughput.
• Embedded Systems with Error Correction ECC SDRAM form factor provides error-correcting capability suitable for embedded designs that require added data integrity in volatile memory subsystems.

Unique Advantages

• Programmable Latency Options: CAS latency selectable between 2 and 3 allows design-level timing optimization based on system clock and access patterns.
• High-Frequency Operation: Support for up to 166 MHz clocking and 5.4 ns access time enables higher sequential and burst data rates where needed.
• Flexible Burst and Bank Control: Multiple burst lengths, wrap sequencing (sequential or interleave) and four-bank control provide flexibility for varied memory access schemes.
• Industrial Temperature Range: Specified −40°C to 85°C (TA) for reliable operation in temperature-critical applications.
• Standard 3.3 V Supply and LVTTL I/O: Single 3.3 V ±0.3 V power and LVTTL interface simplify integration into existing 3.3 V systems.
• Compact TSOP Package: 86-TFSOP / 86-TSOP II package delivers a space-efficient footprint for board-level designs.

Why Choose ECC SDRAM, 256MB, 3.3V, 8MX32, 1?

The IME2532SDBETG-6I combines synchronous SDRAM performance with error-correcting SDRAM packaging and industrial temperature capability, making it a practical choice for systems that need deterministic high-speed memory with integrity features. Its programmable latency, burst control and multi-bank architecture enable designers to tailor memory behavior to application timing and throughput requirements.

This device suits engineers and procurement teams building embedded, networking, or industrial platforms that require a 256 Mbit, 3.3 V synchronous DRAM solution with LVTTL I/O, compact TSOP packaging and specified industrial-temperature operation.

For pricing, lead time, or to submit a request for a quote, please request a quote or submit a quotation request to our sales team for this IME2532SDBETG-6I ECC SDRAM device.