IME5116SDBETG-75

The IME5116SDBETG-75 is an ECC-enabled synchronous DRAM device organized as 32M×16 (4 banks × 8Mbit × 16), providing 512 Mbit of volatile memory with integrated error correction. It is designed for synchronous operation with LVTTL signaling and a single 3.3 V ±0.3 V supply.

Built for applications that need ECC-protected volatile storage and predictable timing, this device supports a 133 MHz system clock for the -75 speed grade and includes programmable CAS latency and burst modes to match a range of system requirements.

Key Features

• Core / Memory Architecture — Organized as 32M × 16 (4 banks × 8Mbit × 16) delivering a total of 512 Mbit with integrated ECC error correction.
• Performance — Rated for 133 MHz system frequency on the -75 speed grade with a clock access time (tAC) of 5.4 ns and a write cycle time (word page) of 15 ns. The IME51 family supports high-speed transfer rates up to 166 MHz (per datasheet family specification).
• Programmability & Burst Operation — Programmable CAS latency (2 or 3), selectable wrap sequence (sequential or interleave), and programmable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave).
• System Reliability — Integrated ECC error correction for improved data integrity; supports Auto Refresh and Self Refresh with a refresh interval of 4096 cycles/64 ms (commercial range).
• Interface & Power — LVTTL interface with a single 3.3 V ±0.3 V power supply (3.0 V to 3.6 V operating range).
• Commands & Modes — Full synchronous operation referenced to clock rising edge, single-pulsed RAS interface, data mask for read/write control, automatic and controlled precharge, multiple burst read with single write.
• Package & Mounting — Available in 54-pin TSOP II (0.400", 10.16 mm width) surface-mount package.
• Operating Temperature — Commercial operating range: 0°C to +70°C (Ta).

Typical Applications

• ECC-protected system memory — Use where volatile storage with integrated error correction is required for data integrity in embedded designs.
• Buffering and working memory — High-speed synchronous transfers and programmable burst modes suit buffering tasks in systems that use LVTTL interfaces and a 3.3 V supply.
• Embedded and industrial equipment (commercial range) — Devices operating within 0°C to +70°C that require compact TSOP II packaging and predictable refresh behavior.

Unique Advantages

• Integrated ECC error correction: Built-in ECC improves data integrity without adding external error-correction logic.
• Flexible timing and burst control: Programmable CAS latency and burst lengths let designers tune latency and throughput to system needs.
• Synchronous LVTTL interface with single 3.3 V supply: Simplifies power and interface design for systems using standard 3.3 V logic.
• Compact TSOP II package: 54-pin TSOP II (0.400" width) supports surface-mount, space-conscious board layouts.
• Robust refresh and power modes: Auto Refresh, Self Refresh and Power Down modes help manage data retention and power consumption during inactive periods.

Why Choose ECC SDRAM, 512MB, 3.3V, 32MX16,

The IME5116SDBETG-75 combines ECC-protected SDRAM architecture with flexible timing modes and a compact 54-pin TSOP II package, making it suitable for designs that require reliable volatile storage with configurable performance. Its LVTTL interface and single 3.3 V supply simplify integration into existing 3.3 V systems.

Targeted at engineers and procurement working on embedded systems and other designs that need ECC-enabled DRAM in a small footprint, this device offers a balance of performance, reliability, and integration for commercial-temperature applications.

Request a quote or submit a request for pricing and availability for IME5116SDBETG-75 to obtain lead time and order information.