IM6432SDBABG-6I

The IM6432SDBABG-6I is a synchronous DRAM device from Intelligent Memory Ltd., organized as 4 banks × 512Kbit × 32 (2M × 32) and specified as 64Mbit in the datasheet. It operates from a single 3.3 V supply (3.0 V to 3.6 V) and supports synchronous operation referenced to the rising edge of an external clock.

Designed for systems that require pipelined, burst-capable SDRAM, the device supports clock rates up to 166 MHz and programmable CAS latency, providing deterministic timing for designs that need synchronized memory access within the stated voltage and temperature ranges.

Key Features

• Core / Memory Organization 4 banks × 512Kbit × 32 organization (2M × 32) delivering 64Mbit SDRAM capacity as documented in the datasheet.
• Performance Supports system clock frequencies up to 166 MHz with a clock cycle time of 6 ns and a clock access time of 5.5 ns at CAS latency = 3; CAS latency is programmable to 2 or 3.
• Burst and Access Modes Programmable burst lengths (1, 2, 4, 8 and full page for sequential; 1, 2, 4, 8 for interleave), selectable wrap sequence (sequential or interleave), and support for multiple burst read with single write.
• Refresh and Power Management Auto Refresh and Self Refresh supported with a refresh interval of 4096 cycles per 64 ms; includes Power Down mode and automatic/controlled precharge commands.
• Interface and Control Full synchronous interface with all control, address and data referenced to the clock rising edge; LVTTL-compatible interface and data mask (DQM) for read/write control. Four banks are selected via BA0 and BA1.
• Timing and Cycle Write cycle time (word/page) listed at 2 ns and clock cycle time of 6 ns for the -6 speed grade (PC166).
• Supply and Temperature Single 3.3 V ±0.3 V supply range (3.0 V to 3.6 V) and industrial operating temperature of -40°C to 85°C (TA) for the -6I variant.
• Package Available in a 90-ball FBGA (11 mm × 13 mm) / 90-LFBGA package (90-FBGA (11×13)).

Typical Applications

• Embedded memory subsystems — Use as synchronous external DRAM in board-level designs requiring a 64Mbit SDRAM device with up to 166 MHz clocking.
• Telecommunications and network modules — Provides burst-capable, banked memory for systems needing predictable synchronous access within the specified voltage and temperature range.
• Industrial control equipment — Industrial temperature grade (-40°C to 85°C) and 3.3 V operation support deployment in temperature-variable environments.

Unique Advantages

• Deterministic synchronous timing: All control, address and data are referenced to the clock rising edge, enabling synchronized system-level memory timing.
• Flexible burst operation: Programmable burst lengths and wrap sequence modes allow tuning throughput and access patterns based on application needs.
• Banked architecture for higher random access rate: Four-bank organization enables interleaved operation to increase random access throughput within the device’s timing limits.
• Industrial temperature support: The -6I variant specifies an operating temperature range of -40°C to 85°C for designs requiring extended temperature operation.
• Compact BGA package: 90-ball FBGA (11×13 mm) package provides a small footprint option for space-constrained PCBs.

Why Choose IM6432SDBABG-6I?

The IM6432SDBABG-6I provides a synchronous, banked 64Mbit SDRAM solution with up to 166 MHz clock operation, programmable CAS latency, and flexible burst modes—features that support deterministic memory timing and configurable throughput. Its single 3.3 V power supply and LVTTL interface make it suitable for designs that require standard 3.3 V SDRAM integration.

This device is appropriate for engineers specifying external SDRAM for embedded systems, network modules, and industrial equipment where the combination of banked architecture, synchronous operation, and industrial temperature range align with system requirements.

For pricing or to request a quote, submit an inquiry with the part number IM6432SDBABG-6I to receive availability and lead-time details.