IM6416SDBATG-6I

The IM6416SDBATG-6I is a 64Mbit Synchronous DRAM organized as 4 banks × 1Mbit × 16, designed for high-speed synchronous memory applications. It implements full synchronous DRAM architecture with all control, address and data signals referenced to the rising edge of an external clock.

With operation up to 166 MHz, LVTTL interface and programmable CAS latency and burst options, this device targets systems that require predictable, clock-synchronous DRAM performance in a compact 54-pin TSOP II package across a wide supply and temperature range.

Key Features

• Memory Architecture 4 banks × 1Mbit × 16 organization (4M × 16 total) providing 64Mbit of volatile DRAM storage.
• High-Speed Operation Supports system frequencies up to 166 MHz with clock access times down to 5.4 ns (specified access time) and programmable CAS latency (2 or 3).
• Burst and Access Flexibility Programmable burst lengths (1, 2, 4, 8 and full page for sequential type; 1, 2, 4, 8 for interleave type), programmable wrap sequence (sequential or interleave) and multiple burst read with single write operation.
• Refresh and Power Management Auto Refresh and Self Refresh supported, with a refresh interval of 4096 cycles/64 ms, and a Power Down mode for reduced power when idle.
• Interface and Control LVTTL I/O interface with data mask for read/write control, four-bank control via BA0/BA1, single pulsed RAS interface, and automatic/controlled precharge commands.
• Supply and Timing Single supply operation from 3.0 V to 3.6 V (single 3.3 V ± 0.3 V), write cycle time (word/page) listed as 2 ns, and system timing optimized for synchronous clocked operation.
• Package and Temperature Available in a 54-pin TSOP II (0.400", 10.16 mm width) package; operating temperature specified as −40°C to 95°C (TC) in product specifications.
• Manufacturing and Compliance Lead-free / RoHS indicated in the datasheet feature set.

Unique Advantages

• Clock-synchronous DRAM architecture: Ensures all commands and data are synchronized to the rising edge of an external clock for predictable timing in synchronous systems.
• Up to 166 MHz operation: Enables higher sequential and burst throughput where system timing supports PC166-class operation.
• Programmable latency and burst control: CAS latency options (2, 3) and flexible burst lengths allow tuning of read/write behavior to match system access patterns.
• Comprehensive refresh and power modes: Auto and self refresh plus power down mode help manage dynamic power and retention during idle periods.
• Compact TSOP-II package: 54-pin TSOP II option provides a space-efficient footprint for board-level integration.
• Wide supply window: 3.0 V to 3.6 V tolerance (single 3.3 V ± 0.3 V) simplifies power supply design in 3.3 V systems.

Why Choose IM6416SDBATG-6I?

The IM6416SDBATG-6I positions as a synchronous DRAM solution offering clock-referenced operation, flexible burst and latency programming, and support for up to 166 MHz system clocks. Its 4-bank × 1Mbit × 16 organization provides a straightforward 64Mbit memory option in a compact 54-pin TSOP II package.

This device is suited to designs that require predictable synchronous memory timing, flexible burst behavior, and standard LVTTL signaling, while offering power management features and a broad supply and temperature specification for reliable operation in varied environments.

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